Recently, block copolymer directed self-assembly (DSA) has demonstrated great advantages in patterning contacts/vias for the 7 nm technology node and beyond. The high throughput and low process cost of DSA makes it the most promising candidate in patterning tight pitched dense patterns for the next generation lithography. Since DSA is very sensitive to the shapes and distributions of the guiding templates, it is necessary to develop new EDA algorithms and tools to address the patterning rules and constraints of the process. This paper presents a set of DSA-aware optimization techniques targeting the most urgent problems for DSA technology, including layout optimization and template pattern verification.

The continued scaling of feature size has brought increasingly significant challenges to conventional optical lithography.[1-3] The rising cost and limited resolution of current lithography technologies have opened up opportunities for alternative patterning approaches. Among the emerging patterning approaches, block copolymer self-assembly for device fabrication has been envisioned for over a decade. Block copolymer DSA is a result of spontaneous microphase separation of block copolymer films, forming periodic microdomains including cylinders, spheres, and lamellae, in the same way that snowflakes and clamshells are formed in nature - by self-assembly due to forces of nature (Fig. 1a). DSA can generate closely packed and well controlled sub-20 nm features with low cost and high throughput, therefore stands out among other emerging lithographic solutions, including extreme ultraviolet lithography (EUV), electron beam lithography (e-beam), and multiple patterning lithography (MPL).[2;6]