Qiwei Ren

dblp:162/1191 · DBLP profile ↗
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2ranked-venue papers
0as first author
2since 2021 · last 2023
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 since 2021Applied, interdisciplinary, general and emerging computing · 1 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 62% Memory systems · 38%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
memory circuit design
0.712023
Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory · Sci. China Inf. Sci. 2023
Memory systems › on-chip memory
embedded memory
0.212023
Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory · Sci. China Inf. Sci. 2023
Memory systems
non-volatile memory
0.212023
Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory · Sci. China Inf. Sci. 2023

Methods — techniques the papers use, named apart from their topics

hafnium zirconium oxide ferroelectric · 0.7
YearPublicationVenuePosition
2023 Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory
Wenwu Xiao, Huifu Duan, Fujun Bai, Qiwei Ren, Genquan Han
Sci. China Inf. Sci.7
2023 A Low-Cost Reduced-Latency DRAM Architecture With Dynamic Reconfiguration of Row Decoder
abstract
DRAM latency has remained almost constant over decades and has become a performance bottleneck of computing systems. In this study, we propose a low-cost DRAM architecture enabling dynamic reconfiguring of row decoder to provide reduced latency with high flexibility and reliability. We apply minimum changes to row decoders and allow dynamic reconfiguration to switch array blocks between two modes: 1) normal mode, where the DRAM array behaves in the same manner as the conventional DRAM does and 2) low latency mode, where two DRAM cells in the neighbor array blocks are coupled to operate as a logical cell and reduce latency reliably according to the differential principle. On the basis of an industrial open bitline (BL) cell array, we only change the word-line decoding scheme but keep the cell array and sense amplifiers (SAs) untouched to avoid modifications to the DRAM process for cost and reliability considerations. Our circuit simulation shows that the low-latency mode can reduce row-to-column delay and row access strobe time by 25.7% and 23.2%, respectively. We evaluate the reduced-latency LPDDR4 DRAM on various workloads. Compared with the JEDEC standard DRAM, our proposal provides a maximum system performance improvement of 8.5%. We believe that our proposal is a reliable and cost-friendly solution to DRAM latency reduction.
Fujun Bai, Xuerong Jia, Cong Lai, Qiwei Ren, Hongbin Sun 0001
IEEE Trans. Very Large Scale Integr. Syst.8