This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips ($V_{\mathrm {REF}}$and$I_{\mathrm {REF}}$) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of$V_{\mathrm {REF}}$and$I_{\mathrm {REF}}$are 29ppm$/^{\circ} \text{C}$and 822ppm$/^{\circ} \text{C}$over a temperature range from$- 40^{\circ} \text{C}$to$120^{\circ} \text{C}$. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.

This paper proposes a high-precision sub-bandgap (sub-BGR) voltage reference (VR) and a temperature-compensated shared-resistive nanoampere current reference (CR) for ultra-low-power Internet of Things (IoT) devices. The CR is used to generate a bipolar junction transistor (BJT) complementary-to-absolute-temperature (CTAT) voltage, which is summed up with a proportional-to-absolute-temperature (PTAT) voltage generated using a summing network of CMOS-gate-coupled pairs. The proposed sub-BGR VR and CR are implemented in a 130 nm CMOS process. Post-layout simulations confirm the excellent performance of the second-order temperature-compensated VR across process corners with a mean temperature coefficient of 19 ppm/°C. The designed 474mV VR shows a line regulation of 0.1% N, with an overall power consumption of 30 nW.

A fully differential Potentiometric sensor interface consisting of a high input impedance programmable-gain preamplification stage followed by a delta-sigma (ΔΣ) ADC is presented. The reconfigurable circuit achieves a dynamic range of 92 dB and a resolution of 126 μν, thus enabling electrochemical analyses for multiple biochemical parameters. The fully differential topology of the signal acquisition chain in combination with the use of feedforward compensated opamps leads to a high interference robustness of the implementation. Compared to a single-ended topology, PSRR, CMRR and EMIRR improvements by 43.3 dB, 6.8 dB and 21.6 dB, respectively, are achieved. These properties and the low power and area consumption of 75 μW and 0.081 mm2allow the circuit to be used in wirelessly powered electrochemical point-of-care (PoC) diagnostics.

In recent years, fields such as industrial automation, virtual and augmented reality and autonomous robotics increased the demand for location-awareness of electronic devices. Image sensor based inside-out localization and tracking systems are sufficiently accurate to determine the position and orientation of electronic devices. Without additional sensors however, these systems are impaired in reaching high update-rates, handling fast motions, and tend to be unable to provide localization with low latency. We present a new localization approach in our work, using Time-of-Flight 3D sensors in combination with small reflective markers. This allows to establish high-performance optical localization systems, delivering the position and orientation of a device at a rate of several hundred Hz. A novel Time-of-Flight 3D sensing procedure is introduced, enabling to measure the 3D positions of fast moving targets at unprecedented frame-rates. With this work, we aim to close the gap between indoor positioning and motion tracking, enabling a new class of location-aware devices.