EDBT 2026 Demo / reviewers in the wild / expert
Minhan Mi
dblp:174/6529
· DBLP profile ↗
4ranked-venue papers
0as first author
4since 2021 · last 2025
—ORCID · conflict
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 4 · 4 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
4 papers |
Integrated circuit design · 84% Hardware reliability and fault tolerance · 16% | |
| Computer networks
1 paper |
Physical-layer communications · 100% |
Topics — the 4 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
2.2 | 3 | 2025 | High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure · Sci. China Inf. Sci. 2025 A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness · Sci. China Inf. Sci. 2024 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance › aging
transistor aging |
0.7 | 1 | 2023 | Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light · Sci. China Inf. Sci. 2023 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.6 | 1 | 2022 | Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices
semiconductor device engineering |
0.2 | 1 | 2024 | A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
top-MIS-gate · 0.9three-dimensional-gated modulation · 0.9TCAD simulation · 0.8off-state stress · 0.7UV light stress · 0.7
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
Can Gong, Minhan Mi, Yuwei Zhou, Hanzhen Li, Xinyi Wen, Sirui An, Xiang Du, Qing Zhu 0013, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 2 |
| 2024 | A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
Sirui An, Minhan Mi, Qing Zhu 0013, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 2 |
| 2023 | Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Qing Zhu 0013, Jiejie Zhu, Minhan Mi, Yuwei Zhou, Ziyue Zhao 0003, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 4 |
| 2022 | Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Xiaohua Ma 0001, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Qing Zhu 0013, Ling Yang 0003, Yue Hao 0001 |
Sci. China Inf. Sci. | 4 |