A ferroelectric memory array is described that may be implemented with discrete bits, discrete words, or multiple word components. Binary information is stored as either a positive or negative polarization state in the ferroelectric ceramic material and is read out, with interrogation, by sensing a positive polarity pulse for a " 1" bit, and the lack of a signal for a " 0." The maximum size of the memory is limited only by noise isolation of the bit lines. The array, because of its nonresonant operation, may be interrogated asynchronously. The memory READ/WRITE circuit configuration provides random word access, a device immune to disturb pulses, and compatibility with integrated or discrete circuits. The ceramic material and its configuration provide nonvolatile storage and non-destructive readout. Experimental 5-wordX8-bit discrete word prototype memory array implementations are examined.

A nonvolatile NDRO memory utilizing a new concept is described. The concept is based on the recent discovery of a new electrodynamic phenomena which is related to the Procopiu effect. In its simplest form the memory consists of a ferromagnetic wire with a concentrically wound pickup coil. The memory operates on the principle that an EMF will be induced in a search coil wound over a ferromagnetic wire when the wire carries a pulse or alternating current and is under the influence of a stationary longitudinal magnetic field. The wire is not strained. Under such conditions the search coil produces an output or ``read'' signal whose polarity or phase, relative to the clock input to the ferromagnetic wire, is a function of the prior insertion of a unidirectional current into the wire. The clock or interrogate drive may be unipolar pulses or sinusoidal alternating current. In the first case the pickup coil produces negative or positive pulses, and in the latter case a sinusoidal output of the same frequency as the clock, in or 180° out of phase.