Demo Data from EDBT 2026 / reviewers in the wild / expert
Woo F. Chow
dblp:179/4953
· DBLP profile ↗
2ranked-venue papers
2as first author
0since 2021 · last 1967
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 2 · 2 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 51% Memory systems · 49% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Memory systems
content-addressable memory |
0.0 | 1 | 1967 | Plated Wire Content-Addressable Memories with Bit-Steering Technique · IEEE Trans. Electron. Comput. 1967 |
Integrated circuit design
digital circuit design |
0.0 | 1 | 1960 | Tunnel Diode Digital Circuitry · IRE Trans. Electron. Comput. 1960 |
Integrated circuit design › memory circuit design
memory array design |
0.0 | 1 | 1967 | Plated Wire Content-Addressable Memories with Bit-Steering Technique · IEEE Trans. Electron. Comput. 1967 |
Integrated circuit design › digital circuit design › logic families
tunnel diode logic circuits |
0.0 | 1 | 1960 | Tunnel Diode Digital Circuitry · IRE Trans. Electron. Comput. 1960 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1967 | Plated Wire Content-Addressable Memories with Bit-Steering TechniqueabstractThis report describes a new concept of content-addressable memory (CAM) implemented with plated wires and the bit-steering technique. The 5-mil plated wires are insulated with a thin (0.2 to 0.3 mil) coat of polyurethane, and imbedded in a copper plane. A memory array is formed by means of a simple orthogonal arrangement of plated wires and an overlay of copper straps. Because of the low loop impedance (2 to 5 ohms depending on the design but uniform to within ± 5 percent for a given design) formed between an insulated plated wire and the copper plane, a loop current of the order of 30 mA can be generated by pulsing a pair of straps. This current is used to transfer information from one bit position to another bit along the same plated wire. Consequently, logic manipulations can be performed within the memory array. The resolve operation is executed in the array where a binary address tree is stored. The addresses of matched words are obtained via the sieving action of the tree. With a complementary address tree added to this resolve area, the addressed READ/WRITE operations are executed by first searching for the given address and then READ/WRITE on the matched word. The search cycle time of a CAM of 4096 words, 40 bits per word, is estimated to be about 1 to 2 μs, based upon experimental results. The resolve time is about 1.5 μs for any one of the 4096 addresses. Woo F. Chow |
IEEE Trans. Electron. Comput. | 1 |
| 1960 | Tunnel Diode Digital CircuitryabstractThis paper is divided into two parts. In the first part, the basic tunnel diode logic circuits are discussed. These include the monostable and the bistable analog-threshold gates and the ``Goto-pair,'' which uses the principle of majority decision. These circuits are studied to determine the requirement on tunnel diodes and other component tolerances. Relations between the ``fan-in'' and the ``fan-out'' numbers and the component tolerances are derived. The results indicate that the ``Goto-pair'' is somewhat superior to the analog-threshold gates with respect to circuit reliability. In the second part, a tunnel diode flip-flop stage which has advantages with respect to speed, ease, of operation and component tolerances is described. Combination of these flip-flops in counter and shift-register configurations have been successfully operated. Several potential advantages over conventional transistor circuits are discussed. Woo F. Chow |
IRE Trans. Electron. Comput. | 1 |