Deploying a lightweight quantized model in compute-in-memory (CIM) might result in significant accuracy degradation due to reduced signal-noise rate (SNR). To address this issue, this paper presents ZEBRA, a zero-bit robust-accumulation CIM approach, which utilizes bitwise zero patterns to compress computation with ultra-high resilience against noise due to circuit non-idealities, etc. First, ZEBRA provides a cross-level design that successfully exploits value-adaptive zero-bit patterns to improve the performance in robust 8-bit quantization dramatically. Second, ZEBRA presents a multi-level local computing unit circuit design to implement the bitwise sparsity pattern, which boosts the area/energy efficiency by 2x-4x compared with existing CIM works. Experiments demonstrate that ZEBRA can achieve10% accuracy loss. Such robustness leads to much more stable accuracy for high-parallelism inference on large models in practice.

Logic camouflage is a widely adopted technique that mitigates the threat of intellectual property (IP) piracy and overproduction in the integrated circuit (IC) supply chain. Camouflaged logic achieves functional obfuscation through physical-level ambiguity and post-manufacturing programmability. However, discussions on programmability are confined to the level of logic cells/gates, limiting the broader-scale application of logic camouflage. In this work, we propose a novel module-level configuration methodology for programmable camouflaged logic that can be implemented without additional hardware ports and with negligible resources. We prove theoretically that the configuration of the programmable camouflaged logic cells can be achieved through the inputs and netlist of the original module. Further, we propose a novel lightweight ferroelectric FET (FeFET)-based reconfigurable logic gate (rGate) family and apply it to the proposed methodology. With the flexible replacement and the proposed configuration-aware conversion algorithm, this work is characterized by the input-only programming scheme as well as the combination of high output error rate and point-function-like defense. Evaluations show an average of >95% of the alternative rGate location for camouflage, which is sufficient for the security-aware design. We illustrate the exponential complexity in function state traversal and the enhanced defense capability of locked blackbox against Boolean Satisfiability (SAT) attacks compared with key-based methods. We also preserve an evident output Hamming distance and introduce negligible hardware overheads in both gate-level and module-level evaluations under typical benchmarks.

With surging interest in quantum computing, space applications, and ultra-fast superconducting processors, the need for compatible cryogenic memory systems is skyrocketing. Among several concurrent candidates for cryogenic data storage solutions, quantum anomalous Hall effect (QAHE) devices have garnered immense interest due to having topologically protected variation-tolerant quantum states. The QAHE cells, in addition to being a promising non-volatile storage technology, have several unique properties that make them ideal for in-memory computing operations. In this work, we propose a novel in-memory computing mechanism by harnessing the intrinsic voltage addition property of a QAHE memory array, implemented using twisted bi-layer graphene (tBLG) on hexagonal boron nitride (hBN). In addition, we extensively explore and implement ternary arithmetic operations utilizing the series-connected Hall voltages across devices for the first time. We propose two schemes for in-memory ternary computing namely IMFE and IMSE, and demonstrate balanced scalar multiplication, dot product operations, and ternary half adder with QAHE memory array.

In normally-off instant-on applications, power-gating of the embedded memory is an effective way for higher power efficiency by preventing long-standby-time leakage energy. Recent efforts of nonvolatile SRAM (nvSRAM) design with in-cell NVM element backup provide an efficient way for both normal-mode computing and off-mode backup and restore (B&R) operations. For these efforts, circuit innovations are required to achieve optimal balance between B&R energy and area overheads. In this paper, we report a novel 8T/cell FeFET-based nvSRAM design that outperforms prior FeFET-based designs with higher density, while still maintaining the advantage of only sub-fJ energy for each B&R operation, 363x lower than the existing RRAM-based nvSRAM design. Compared with prior FeFET-based designs, this design reduces the B&R transistor count per cell from 4 to only 2, which leads to a significant total area overhead reduction of 11%.

Content-addressable memory (CAM) has been a critical component in pattern matching and also machine-learning applications. Recently emerged CAM that is capable of delivering multi-level distance calculation is promising for applications that need matching results beyond Boolean results of ?matched" and ?not matched". However, existing multi-level CAM designs are constrained by the bit-cell device discharging current mismatch and the strict timing of sensing operations for distance calculation. This fact results in the challenge of further improving the accuracy and scalability towards higher-resolution and higher-dimension matching. This work presents a multi-level CAM design that is capable of delivering high-accuracy and high-scalability search, which is immune to the discharging device mismatch and needs no strict timing for result sensing. The inherent enabler is the charge-domain computing mechanism. This work will present the operating mechanisms, the circuit simulation, and content-matching evaluation results, showing the promise towards high reliability, high energy efficiency, and high scalability.

Modern data center applications are user facing/latency critical. Our work analyzes the characteristics of such applications i.e., high idleness, unpredictable CPU usage, and high sensitivity to CPU performance. In spite of such execution characteristics, datacenter operators disable sleep states to optimize performance. Deep-sleep states hurt performance mainly due to: a) high wake-latency and b) cache warm-up after exiting deep-sleep. To address these challenges, we quantify three necessary characteristics required to realize deep-sleep states in datacenter applications: a) low wake-latency, b) low resident power, and c) selective retention of cache-state. Using these observations, we show how emerging technological advances can be leveraged to improve the energy efficiency of latency-critical datacenter workloads.

So-called “tagless” caches have become common as a means to deal with the vast L4 last-level caches (LLCs) enabled by increasing device density, emerging memory technologies, and advanced integration capabilities (e.g., 3-D). Tagless schemes often result in intercache entanglement between tagless cache (L4) and the cache (L3) stewarding its metadata. We explore new cache organization policies that mitigate overheads stemming from the intercache-level replacement entanglement. We incorporate support for explicit tiling shapes that can better match software access patterns to improve the spatial and temporal locality of large block allocations in many essential computational kernels. To address entanglement overheads and pathologies, we propose new replacement policies and energy-friendly mechanisms for tagless LLCs, such as restricted block caching (RBC) and victim tag buffer caching (VBC) to incorporate L4 eviction costs into L3 replacement decisions efficiently. We evaluate our schemes on a range of linear algebra kernels that are software tiled. RBC and VBC demonstrate a reduction in memory traffic of 83/4.4/67% and 69/35.5/76% for 8/32/64 MB L4s, respectively. Besides, RBC and VBC provide speedups of 16/0.3/0.6% and 15.7/1.8/0.8%, respectively, for systems with 8/32/64 MB L4, over a tagless cache with an LRU policy in the L3. We also show that matching the shape of the hardware allocation for each tagless region superblocks to the access order of the software tile improves latency by 13.4% over the baseline tagless cache with reductions in memory traffic of 51% over linear superblocks.

For several emerging memory technologies, a natural formulation of memory arrays (cross-point) provides nearly symmetric access costs along multiple (e.g., both row and column) dimensions in contrast to the row-oriented nature of most DRAM and SRAM implementations, producing a Multi-Dimensional-Access (MDA) memory. While MDA memories can directly support applications with both row and column preferences, most modern processors do not directly access either the rows or columns of memories: memory accesses proceed through a cache hierarchy that abstracts many of the physical features that supply the aforementioned symmetry. To reap the full benefits of MDA memories, a co-design approach must occur across software memory layout, the mapping between the physical and logical organization of the memory arrays, and the cache hierarchy itself in order to efficiently express, convey, and exploit multidimensional access patterns. In this paper, we describe a taxonomy for different ways of connecting row and column preferences at the application level to an MDA memory through an MDA cache hierarchy and explore specific implementations for the most plausible design points. We extend vectorization support at the compiler level to provide the necessary information to extract preferences and provide compatible memory layouts, and evaluate the tradeoffs among multiple cache designs for the MDA memory systems. Our results indicate that both logically 2-D caching using physically 1-D SRAM structures and on-chip physically 2-D caches can both provide significant improvements in performance over a traditional cache system interfacing with an MDA memory, reducing execution time by 72% and 65%, respectively. We then explore the sensitivity of these benefits as a function of the working-set to cache capacity ratio as well as to MDA technology assumptions.

Ferroelectric FETs (FEFETs) offer intriguing possibilities for the design of low power nonvolatile memories by virtue of their three-terminal structure coupled with the ability of the ferroelectric (FE) material to retain its polarization in the absence of an electric field. Utilizing the distinct features of FEFETs, we propose a 2-transistor (2T) FEFET-based nonvolatile memory with separate read and write paths. With proper co-design at the device, cell and array levels, the proposed design achieves non-destructive read and lower write power at iso-write speed compared to standard FERAM. In addition, the FEFET-based memory exhibits high distinguishability with six orders of magnitude difference in the read currents corresponding to the two states. Comparative analysis based on experimentally calibrated models shows significant improvement of access energy-delay. For example, at a fixed write time of 550ps, the write voltage and energy are 58.5% and 67.7% lower than FERAM, respectively. These benefits are achieved with 2.4 times the area overhead. Further exploration of the proposed FEFET memory in energy harvesting nonvolatile processors shows an average improvement of 27% in forward progress over FERAM.

We present a non-volatile flip-flop with a feature to back-up the state in a ferroelectric transistor (FEFET) during power failure or supply gating. The data is stored in the form of polarization of the ferroelectric (FE) layer in the gate stack of the FEFET. The proposed flip-flop utilizes the non-volatility of the three-terminal FEFET to optimize the data backup and restore operations. We perform an extensive device-circuit analysis to provide insights into the design of the proposed flip-flop. We discuss the optimization of the FE thickness in the gate stack of the FEFET to introduce suitable non-volatility and present the implications at the circuit level. Our analysis shows that by virtue of the three terminal structure of the FEFET and the order of magnitude difference in the current for the two polarization states, the design of the backup/restore module is considerably simplified. Compared to a FE capacitor based non-volatile flip-flop, the proposed flip-flop achieves 40%--50% smaller backup delay, 27%--40% lower backup energy, comparable restore delay and up to an order of magnitude lower restore energy. While the FE capacitor based design leads to 76% area penalty compared to a conventional (volatile) flip-flop, the proposed design incurs only 35% area overhead.

The Internet-of-Things (IoT) has excited low-power design from device, circuits, to architectures levels. This paper talks about how recent emerging beyond-CMOS devices, such as tunnel field effect transistor (TFET), negative capacitance FET (NCFET), and phase transition devices (PTD), could extend the low-power design space to enable IoT applications with beyond-CMOS features.