Demonstration venue · read-only. Every page can be browsed; the buttons that would change it are switched off. Create an account to run TaxoReview on your own data.
EDBT 2026 Demo / reviewers in the wild / expert

J. B. Earnshaw

dblp:180/6338 · DBLP profile ↗
← Back
1ranked-venue papers
1as first author
0since 2021 · last 1964
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Memory systems · 50% Integrated circuit design · 50%

Topics — the 1 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Memory systems
random-access memory		 0.011964
Design for a Tunnel Diode-Transistor Store with Nondestructive Read-Out of Information · IEEE Trans. Electron. Comput. 1964

Methods — techniques the papers use, named apart from their topics

circuit design · 0.0
YearPublicationVenuePosition
1964 Design for a Tunnel Diode-Transistor Store with Nondestructive Read-Out of Information
abstract
The design of a random-access, word-organized storage system with nondestructive read-out of information is described. The storage element upon which the design is based consists of a tunnel diode-transistor combination. Measurements on a simulated store of 16 words ×24 digits capacity indicate that cycle times of approximately 40 nsec for Read orders and 65 nsec for Write orders can be achieved.
J. B. Earnshaw
 IEEE Trans. Electron. Comput.1