Demo Data from EDBT 2026 / reviewers in the wild / expert
Huilong Zhu
dblp:182/8814
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 2020
—ORCID · unresolved
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 61% Hardware reliability and fault tolerance · 39% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Hardware reliability and fault tolerance › aging
bias temperature instability |
0.4 | 1 | 2020 | Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks · Sci. China Inf. Sci. 2020 |
Integrated circuit design › semiconductor devices › multi-gate devices
FinFET |
0.4 | 1 | 2020 | Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks · Sci. China Inf. Sci. 2020 |
Integrated circuit design
semiconductor devices |
0.4 | 1 | 2020 | Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks · Sci. China Inf. Sci. 2020 |
Hardware reliability and fault tolerance
aging |
0.1 | 1 | 2020 | Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks · Sci. China Inf. Sci. 2020 |
Methods — techniques the papers use, named apart from their topics
atomic layer deposition · 0.4
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2020 | Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks
Luwei Qi, Xueli Ma, Yongliang Li, Huaxiang Yin, Huilong Zhu, Wenwu Wang 0006, Tian-Chun Ye 0001 |
Sci. China Inf. Sci. | 12 |