Demo Data from EDBT 2026 / reviewers in the wild / expert
Wuying Ma
dblp:188/0107
· DBLP profile ↗
3ranked-venue papers
0as first author
0since 2021 · last 2019
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
3 papers |
Integrated circuit design · 66% Hardware reliability and fault tolerance · 34% |
Topics — the 4 heaviest of 5, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › image sensor
CMOS image sensor |
0.7 | 3 | 2019 | Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method · Sci. China Inf. Sci. 2018 Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods · Sci. China Inf. Sci. 2017 Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors · Sci. China Inf. Sci. 2019 |
Integrated circuit design › semiconductor devices › image sensor
image sensor design |
0.7 | 3 | 2019 | Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method · Sci. China Inf. Sci. 2018 Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods · Sci. China Inf. Sci. 2017 Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors · Sci. China Inf. Sci. 2019 |
Hardware reliability and fault tolerance
radiation effects |
0.4 | 1 | 2019 | Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors · Sci. China Inf. Sci. 2019 |
Hardware reliability and fault tolerance › radiation effects
single event effects |
0.4 | 1 | 2019 | Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors · Sci. China Inf. Sci. 2019 |
Methods — techniques the papers use, named apart from their topics
proton irradiation · 0.4neutron irradiation · 0.4gamma ray irradiation · 0.4monte carlo method · 0.3particle transport simulation · 0.3
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2019 | Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors
Zujun Wang, Yuanyuan Xue, Wei Chen 0153, Hao Ning, Baoping He, Zhibin Yao, Minbo Liu, Jiangkun Sheng, Wuying Ma, Guantao Dong |
Sci. China Inf. Sci. | 10 |
| 2018 | Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method
Yuanyuan Xue, Zujun Wang, Wei Chen 0153, Baoping He, Zhibin Yao, Minbo Liu, Jiangkun Sheng, Wuying Ma, Guantao Dong, Junshan Jin |
Sci. China Inf. Sci. | 8 |
| 2017 | Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods
Yuanyuan Xue, Zujun Wang, Minbo Liu, Baoping He, Zhibin Yao, Jiangkun Sheng, Wuying Ma, Guantao Dong, Junshan Jin |
Sci. China Inf. Sci. | 7 |