The high-energy particles in space cause SRAM failures. The vulnerability of SRAM increases at lower technology, and it flips the SRAM cell’s data due to single-event multi-node-upset. Various state-of-the-art radiation hardened by design SRAMs have been proposed; however, most designs tackle Single Node Upset (SNU). This paper presents DNU Tolerant Quadruple-16T (DTQ-16T) SRAM with no read disturb. The most important feature of the proposed design is its immunity towards radiation, where it recovers from all possible upsets, whether SNU, DNU, Triple Node Upset (TNU), or Quadruple Node Upset (QNU) for storage ‘1’. On top of it, the proposed design gives very high read stability, Write Access Time, and Wordline Write Trip Voltage (WWTV) than most of the existing radiation-hardened SRAMs. Finally, the post-layout and Monte Carlo simulations validate the efficiency of the proposed SRAM in commercial CMOS 28nm technology.

SSoft errors like single event upset (SEU) and single event double node upset (SEDNU) are significant issues with SRAM-based memory used not only under high radiation environments but also for modern lower technology nodes. The reduction in modern technology may give a higher charge-sharing effect among nodes. The charge-sharing effect means the disturbance on one node may affect the other neighboring nodes. There are many SRAM cells that have been proposed that give single node upset resilience, but very few can solve the charge sharing effect issue or SEDNU. In this paper, a 14T radiation-hardened-based SRAM cell has been proposed to overcome single node upset at any nodes and SEDNU upset at its storage nodes. Simulation results show that only DNUSRM and proposed SRAM give 0% probability of logical flipping. So, out of all compared SRAM cells only DNUSRM and the proposed cell are SEDNU tolerant. The proposed cell gives 50.6%, 22.5%, 0.74%, 17.91%, 60.0%, -19.1%, -5.46%, 25.7%, and 5.22% better total power, area, read speed, write speed, sensitive area, critical charge, hold stability, read stability, and write stability compared to DNUSRM cell. Hence, the better balance among the parameters makes the proposed SRAM more suitable for space and critical terrestrial applications .

Radiation and its effect on neighboring nodes are critical not only for space applications but also for terrestrial applications at modern lower-technology nodes. This may cause static random-access memory (SRAM) failures due to single- and multi-node upset. Hence, this article proposes a 14T radiation-hardened-based SRAM cell to overcome soft errors for space and critical terrestrial applications. Simulation results show that the proposed cell can be resilient to any single event upset and single event double node upset at its storage nodes. This cell uses less power than others. The hold, read, and write stability increases compared with most considered cells. The higher critical charge of the proposed SRAM increases radiation resistance. Simulation results demonstrate that out of all compared SRAMs, only DNUSRM and the proposed SRAM show 0% probability of logical flipping. Also, other parameters such as total critical charge, write stability, read stability, hold stability, area, power, sensitive area, write speed, and read speed of the proposed SRAM are improved by –19.1%, 5.22%, 25.7%, –5.46%, 22.5%, 50.6%, 60.0%, 17.91%, and 0.74% compared with DNUSRM SRAM. Hence, the better balance among the parameters makes the proposed cell more suitable for space and critical terrestrial applications. Finally, the post-layout and Monte Carlo simulation validate the efficiency of SRAMs.