Demo Data from EDBT 2026 / reviewers in the wild / expert
Lanlong Ji
dblp:191/4739
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2022
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 37% Memory systems · 32% Hardware reliability and fault tolerance · 30% |
Topics — the 5 heaviest of 5, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › emerging device technologies
ferroelectric devices |
0.6 | 1 | 2022 | Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022 |
Memory systems
non-volatile memory |
0.5 | 1 | 2021 | Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021 |
Hardware reliability and fault tolerance › radiation effects
total ionizing dose effects |
0.2 | 1 | 2022 | Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance › radiation effects
single event effects |
0.1 | 1 | 2021 | Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021 |
Hardware reliability and fault tolerance
soft errors |
0.1 | 1 | 2021 | Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021 |
Methods — techniques the papers use, named apart from their topics
material characterization · 0.6simulation · 0.5
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2022 | Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Xueqin Yang, Yannan Xu, Jinshun Bi, Linjie Fan, Lanlong Ji, Gaobo Xu |
Sci. China Inf. Sci. | 6 |
| 2021 | Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design
Jianjian Wang, Jinshun Bi, Bo Li 0051, Sandip Majumdar, Lanlong Ji, Ming Liu 0022, Zhangang Zhang |
Sci. China Inf. Sci. | 8 |