Demo Data from EDBT 2026 / reviewers in the wild / expert
Kyoungah Cho
dblp:194/3870
· DBLP profile ↗
3ranked-venue papers
0as first author
3since 2021 · last 2026
0000-0003-1122-8003ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3 · 3 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Network and information security
2 papers |
Cryptographic primitives and cryptanalysis · 77% Hardware security and side channels · 23% | |
| Computer architecture, parallel and distributed computing, and storage systems
3 papers |
Integrated circuit design · 71% Memory systems · 29% |
Topics — the 6 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Cryptographic primitives and cryptanalysis › random number generation
true random number generator |
1.9 | 2 | 2026 | Quaternary true random number generator comprising gated p+-i-n+ diodes · Sci. China Inf. Sci. 2026 Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes · Sci. China Inf. Sci. 2025 |
Integrated circuit design
semiconductor devices |
1.3 | 2 | 2026 | Quaternary true random number generator comprising gated p+-i-n+ diodes · Sci. China Inf. Sci. 2026 Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes · Sci. China Inf. Sci. 2025 |
Cryptographic primitives and cryptanalysis
random number generation |
1.0 | 1 | 2026 | Quaternary true random number generator comprising gated p+-i-n+ diodes · Sci. China Inf. Sci. 2026 |
Hardware security and side channels › hardware security primitives
random number generator |
0.9 | 1 | 2025 | Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes · Sci. China Inf. Sci. 2025 |
Memory systems
DRAM |
0.9 | 1 | 2025 | 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell · Sci. China Inf. Sci. 2025 |
Integrated circuit design
memory circuit design |
0.9 | 1 | 2025 | 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell · Sci. China Inf. Sci. 2025 |
Methods — techniques the papers use, named apart from their topics
cryptographic characterization · 1.7one-transistor one-diode cell · 0.9
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | Quaternary true random number generator comprising gated p+-i-n+ diodes
Hyojoo Heo, Yunwoo Shin, Juhee Jeon, Taeho Park, Seungho Ryu, Kyoungah Cho, Sangsig Kim |
Sci. China Inf. Sci. | 6 |
| 2025 | Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes
Juhee Jeon, Yunwoo Shin, Hyojoo Heo, Jaemin Son, Seungho Ryu, Kyoungah Cho, Sangsig Kim |
Sci. China Inf. Sci. | 6 |
| 2025 | 3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell
Seungho Ryu, Kyoungah Cho, Sangsig Kim |
Sci. China Inf. Sci. | 2 |