Demo Data from EDBT 2026 / reviewers in the wild / expert
Daewon Ha
dblp:196/1952
· DBLP profile ↗
2ranked-venue papers
0as first author
1since 2021 · last 2025
0000-0002-9061-8626ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1 · 1 since 2021Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › multi-gate devices
FinFET |
0.0 | 1 | 2003 | Extremely scaled silicon nano-CMOS devices · Proc. IEEE 2003 |
Integrated circuit design › semiconductor devices
multi-gate devices |
0.0 | 1 | 2003 | Extremely scaled silicon nano-CMOS devices · Proc. IEEE 2003 |
Integrated circuit design › semiconductor devices
silicon-on-insulator |
0.0 | 1 | 2003 | Extremely scaled silicon nano-CMOS devices · Proc. IEEE 2003 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) FlashabstractThe rapid expansion of mass spectrometry (MS) data, now exceeding hundreds of terabytes, poses significant challenges for efficient, large-scale library search — a critical component for drug discovery. Traditional processors struggle to handle this data volume efficiently, making in-storage computing (ISP) a promising alternative. This work introduces an ISP architecture leveraging a 3D Ferroelectric NAND (FeNAND) structure, providing significantly higher density, faster speeds, and lower voltage requirements compared to traditional NAND flash. Despite its superior density, the NAND structure has not been widely utilized in ISP applications due to limited throughput associated with row-by-row reads from serially connected cells. To overcome these limitations, we integrate hyperdimensional computing (HDC), a brain-inspired paradigm that enables highly parallel processing with simple operations and strong error tolerance. By combining HDC with the proposed dual-bound approximate matching (D-BAM) distance metric, tailored to the FeNAND structure, we parallelize vector computations to enable efficient MS spectral library search, achieving 43× speedup and 21× higher energy efficiency over state-of-the-art 3D NAND methods, while maintaining comparable accuracy. Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan, Prasanna Venkatesan Ravindran, Tanvir H. Pantha, Po-Kai Hsu, Zihan Xia 0002, Flavio Ponzina, Winston Chern, Taeyoung Song, Priyankka Gundlapudi Ravikumar, Mengkun Tian, Lance Fernandes, Hari Jayasankar, Chinsung Park, Amrit Garlapati, Kijoon Kim, Jongho Woo, Suhwan Lim, Wanki Kim, Daewon Ha, Duygu Kuzum, Shimeng Yu, Tajana Rosing, Mingu Kang |
ICCAD | 26 |
| 2003 | Extremely scaled silicon nano-CMOS devicesabstractSilicon-based CMOS technology can be scaled well into the nanometer regime. High-performance, planar, ultrathin-body devices fabricated on silicon-on-insulator substrates have been demonstrated down to 15-nm gate lengths. We have also introduced the FinFET, a double-gate device structure that is relatively simple to fabricate and can be scaled to gate lengths below 10 nm. In this paper, some of the key elements of these technologies are described, including sublithographic patterning, the effects of crystal orientation and roughness on carrier mobility, gate work function engineering, circuit performance, and sensitivity to process-induced variations. Leland Chang, Yang-Kyu Choi, Daewon Ha, Pushkar Ranade, Shiying Xiong, Jeffrey Bokor, Chenming Hu, Tsu-Jae King Liu |
Proc. IEEE | 3 |