Using PIM to overcome memory bottleneck • Although various bandwidth increase methods have been proposed, it is physically impossible to achieve a breakthrough increase. - Limited by # of PCB wires, # of CPU ball, and thermal constraints • PIM has been proposed to improve performance of bandwidth-intensive workloads and improve energy efficiency by reducing computing-memory data movement.

Emerging applications such as deep neural network demand high off-chip memory bandwidth. However, under stringent physical constraints of chip packages and system boards, it becomes very expensive to further increase the bandwidth of off-chip memory. Besides, transferring data across the memory hierarchy constitutes a large fraction of total energy consumption of systems, and the fraction has steadily increased with the stagnant technology scaling and poor data reuse characteristics of such emerging applications. To cost-effectively increase the bandwidth and energy efficiency, researchers began to reconsider the past processing-in-memory (PIM) architectures and advance them further, especially exploiting recent integration technologies such as 2.5D/3D stacking. Albeit the recent advances, no major memory manufacturer has developed even a proof-of-concept silicon yet, not to mention a product. This is because the past PIM architectures often require changes in host processors and/or application code which memory manufacturers cannot easily govern. In this paper, elegantly tackling the aforementioned challenges, we propose an innovative yet practical PIM architecture. To demonstrate its practicality and effectiveness at the system level, we implement it with a 20nm DRAM technology, integrate it with an unmodified commercial processor, develop the necessary software stack, and run existing applications without changing their source code. Our evaluation at the system level shows that our PIM improves the performance of memory-bound neural network kernels and applications by 11.2× and 3.5×, respectively. Atop the performance improvement, PIM also reduces the energy per bit transfer by 3.5×, and the overall energy efficiency of the system running the applications by 3.2×.

We propose a novel memory architecture for in-memory computation called McDRAM, where DRAM dies are equipped with a large number of multiply accumulate (MAC) units to perform matrix computation for neural networks. By exploiting high internal memory bandwidth and reducing offchip memory accesses, McDRAM realizes both low latency and energy efficient computation. In our experiments, we obtained the chip layout based on the state-of-the-art memory, LPDDR4 where McDRAM is equipped with 2048 MACs in a single chip package with a small area overhead (4.7%). Compared with the state-ofthe-art accelerator, TPU and the power-efficient GPU, Nvidia P4, McDRAM offers 9.5× and 14.4× speedup, respectively, in the case that the large-scale MLPs and RNNs adopt the batch size of 1. McDRAM also gives 2.1× and 3.7× better computational efficiency in TOPS/W than TPU and P4, respectively, for the large batches.

Technology scaling has continuously improved the density, performance, energy efficiency, and cost of DRAM-based main memory systems. Starting from sub-20nm processes, however, the industry began to pay considerably higher costs to screen and manage notably increasing defective cells. The traditional technique, which replaces the rows/columns containing faulty cells with spare rows/columns, has been able to cost-effectively repair the defective cells so far, but it will become unaffordable soon because an excessive number of spare rows/columns are required to manage the increasing number of defective cells. This necessitates a synergistic application of an alternative resilience technique such as In-DRAM ECC with the traditional one. Through extensive measurement and simulation, we first identify that aggressive miniaturization makes DRAM cells more sensitive to random telegraph noise or variable retention time, which is dominantly manifested as a surge in randomly scattered single-cell faults. Second, we advocate using InDRAM ECC to overcome the DRAM scaling challenges and architect In-DRAM ECC to accomplish high area efficiency and minimal performance degradation. Moreover, we show that advancement in process technology reduces decoding/correction time to a small fraction of DRAM access time, and that the throughput penalty of a write operation due to an additional read for a parity update is mostly overcome by the multi-bank structure and long burst writes that span an entire In-DRAM ECC codeword. Lastly, we demonstrate that system reliability with modern rank-level ECC schemes such as single device data correction is further improved by hundred million times with the proposed In-DRAM ECC architecture.

An important aspect of High-Performance Computing (HPC) system design is the choice of main memory capacity. This choice becomes increasingly important now that 3D-stacked memories are entering the market. Compared with conventional Dual In-line Memory Modules (DIMMs), 3D memory chiplets provide better performance and energy efficiency but lower memory capacities. Therefore, the adoption of 3D-stacked memories in the HPC domain depends on whether we can find use cases that require much less memory than is available now. This study analyzes the memory capacity requirements of important HPC benchmarks and applications. We find that the High-Performance Conjugate Gradients (HPCG) benchmark could be an important success story for 3D-stacked memories in HPC, but High-Performance Linpack (HPL) is likely to be constrained by 3D memory capacity. The study also emphasizes that the analysis of memory footprints of production HPC applications is complex and that it requires an understanding of application scalability and target category, i.e., whether the users target capability or capacity computing. The results show that most of the HPC applications under study have per-core memory footprints in the range of hundreds of megabytes, but we also detect applications and use cases that require gigabytes per core. Overall, the study identifies the HPC applications and use cases with memory footprints that could be provided by 3D-stacked memory chiplets, making a first step toward adoption of this novel technology in the HPC domain.