As SRAM-based caches are hitting a scaling wall, manufacturers are integrating DRAM-based caches into system designs to continue increasing cache sizes. While DRAM caches can improve the performance of memory systems, existing DRAM cache designs suffer from high miss penalties, wasted data movement, and interference between misses and demands. In this paper, we propose TDRAM, a novel DRAM microarchitecture tailored for caching. TDRAM enhances existing DRAM, such as HBM3, by adding small, low-latency mats to store tags and metadata on the same die as the data mats. These mats enable tag and data access in lockstep, in-DRAM tag comparison, and conditional data response based on the comparison result (reducing wasted data transfers), akin to SRAM cache mechanisms. TDRAM further optimizes hit and miss latencies through opportunistic early tag probing. Moreover, TDRAM introduces a flush buffer to store conflicting dirty data on write misses, eliminating data bus turnaround delays on write demands. We evaluate TDRAM in a full-system simulation using a set of HPC workloads with large memory footprints, showing that TDRAM, on average, provides $2.65 \times$ faster tag checks, $1.23 \times$ speedup, and 21% less energy consumption compared to state-of-the-art commercial and research designs.

Resistive random access memory (RRAM) is regarded as one of the most promising emerging memory technologies for next-generation embedded, standalone nonvolatile memory (NVM), and storage class memory (SCM) due to its speed, density, cost, and scalability. Considerable progress has been made in recent years on the manufacturability of RRAM, with low-density RRAM products now in production and the path to higher density parts becoming clearer. This review updates the learning on the fundamental materials and process integration needed for high-volume manufacturing and summarizes very recent progress on array level performance improvement methodology using novel techniques, and circuit level contributions for different applications. The device performance, array integration, and device/circuit codesign for memory systems are discussed. Novel applications besides embedded memory and standalone memory are addressed, including hardware security, neuromorphic computing, and nonvolatile logic systems.