An Guo 0001

dblp:211/4804-1 · DBLP profile ↗
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6ranked-venue papers
3as first author
6since 2021 · last 2026
0000-0003-4677-6114ORCID · conflict

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 4 · 2 first-author · 4 since 2021Applied, interdisciplinary, general and emerging computing · 2 · 1 first-author · 2 since 2021Software engineering, systems software and programming languages · 1 · 1 since 2021
YearPublicationVenuePosition
2026 Near-Memory Architecture for Threshold-Ordinal Surface-Based Corner Detection of Event Cameras
abstract
Event-based Cameras (EBCs) are widely utilized in surveillance and autonomous driving applications due to their high speed and low power consumption. Corners are essential low-level features in event-driven computer vision, and novel algorithms utilizing event-based representations, such as Threshold-Ordinal Surface (TOS), have been developed for corner detection. However, the implementation of these algorithms on resource-constrained edge devices is hindered by significant latency, undermining the advantages of EBCs. To address this challenge, a near-memory architecture for efficient TOS updates (NM-TOS) is proposed. This architecture employs a read-write decoupled 8T SRAM cell and optimizes patch update speed through pipelining. Hardware-software co-optimized peripheral circuits and dynamic voltage and frequency scaling (DVFS) enable power and latency reductions. Compared to traditional digital implementations, our architecture reduces latency/energy by 24.7×/1.2× at Vdd=1.2 V or 1.93×/6.6× at Vdd=0.6 V based on 65nm CMOS process. Monte Carlo simulations confirm robust circuit operation, demonstrating zero bit error rate at operating voltages above 0.62 V, with only 0.2% at 0.61 V and 2.5% at 0.6 V. Corner detection evaluation using precision-recall area under curve (AUC) metrics reveals minor AUC reductions of 0.027 and 0.015 at 0.6 V for two popular EBC datasets.
Hongyang Shang, An Guo 0001, Ye Ke, Arindam Basu
DATE2
2025 A 22-nm 64-kB lightning-like hybrid computing-in-memory macro with a compressed adder tree and analog-storage quantizers for transformer and CNNs
An Guo 0001, Xi Chen 0107, Fangyuan Dong, Jinwu Chen, Zhihang Yuan, Xing Hu 0010, Guangyu Sun 0003, Arindam Basu, Jun Yang 0006, Xin Si
Sci. China Inf. Sci.1
2023 From macro to microarchitecture: reviews and trends of SRAM-based compute-in-memory circuits
Zhaoyang Zhang 0008, Jinwu Chen, Xi Chen 0107, An Guo 0001, Bo Wang 0023, Tianzhu Xiong, Yuyao Kong, Xingyu Pu, Shengnan He, Xin Si, Jun Yang 0006
Sci. China Inf. Sci.4
2022 ShareFloat CIM: A Compute-In-Memory Architecture with Floating-Point Multiply-and-Accumulate Operations
abstract
Compute-in-memory (CIM) has been widely explored to overcome “Von-Neumann bottleneck” for its high throughput and energy efficiency. However, recent compute-in-memory works can only support integer (INT)-type multiply-and-accumulate (MAC) operations. Floating point MACs (FP-MAC) are highly required to achieve both high performance training and high accuracy inference. In this paper, we proposed a ShareFloat CIM architecture which can support FP-MAC operations. Neural networks with ShareFloat MAC can achieve almost the same accuracy as that with FP64 MAC. A 28nm 64Kb ShareFloat CIM macro was further implemented with an energy efficiency of 18.8 TFLOPS/W and 73.11% accuracy when applied to a VGG-16 network with ShareFloat MAC and CIFAR-100 dataset.
An Guo 0001, Yongliang Zhou, Bo Wang 0023, Tianzhu Xiong, Xin Si, Jun Yang 0006
ISCAS1
2022 SNNIM: A 10T-SRAM based Spiking-Neural-Network-In-Memory architecture with capacitance computation
abstract
Spiking-Neural-Networks (SNN) have natural advantages in high-speed signal processing and big data operation. However, due to the complex implementation of synaptic arrays, SNN based accelerators may face low area utilization and high energy consumption. Computing-In-Memory (CIM) shows great potential in performing intensive and high energy efficient computations. In this work, we proposed a JOT-SRAM based Spiking-Neural-Network-In-Memory architecture (SNNIM) with 28nm CMOS technology node. A compact JOT-SRAM bit-cell was developed to realize signed 5bit synapses arrays and configurable bias arrays (SYBIA). The soma array based standard 8T-SRAM (SMTA) stores the soma membrane voltage and the threshold value. A capacitance computation scheme (CCA) between them was proposed to support various SNN operations. The proposed SNNIM achieved energy efficiency of 25.18 TSyOPSI. And the proposed SNNIM achieved 1.79+× better array efficiency compared with previous works.
Bo Wang 0023, Xiang Li 0147, Anran Yin, Zhongyuan Feng, Yuyao Kong, Tianzhu Xiong, Haiming Hsu, Yongliang Zhou, An Guo 0001, Jun Yang 0006, Xin Si
ISCAS11
2022 VCCIM: a voltage coupling based computing-in-memory architecture in 28 nm for edge AI applications
An Guo 0001, Xi Chen 0107, Xin Si
CCF Trans. High Perform. Comput.1