Demo Data from EDBT 2026 / reviewers in the wild / expert
Gaobo Xu
dblp:212/6799
· DBLP profile ↗
6ranked-venue papers
0as first author
4since 2021 · last 2025
0000-0002-4278-251XORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 6 · 4 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
6 papers |
Integrated circuit design · 77% Memory systems · 14% Hardware reliability and fault tolerance · 9% |
Topics — the 14 heaviest of 15, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › emerging device technologies
ferroelectric devices |
1.2 | 2 | 2023 | Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications · Sci. China Inf. Sci. 2023 Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022 |
Memory systems › non-volatile memory
ferroelectric memory |
0.9 | 1 | 2025 | An AND-type 1T-FeFET array with robust write and read operations · Sci. China Inf. Sci. 2025 |
Integrated circuit design
memory circuit design |
0.9 | 1 | 2025 | An AND-type 1T-FeFET array with robust write and read operations · Sci. China Inf. Sci. 2025 |
Integrated circuit design › semiconductor devices › multi-gate devices
FinFET |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design
low-power circuit design |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design › emerging device technologies
negative capacitance FET |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices
semiconductor device design |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › semiconductor device design
transistor design |
0.4 | 1 | 2020 | Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020 |
Integrated circuit design › emerging device technologies
tunneling field effect transistor |
0.4 | 1 | 2020 | Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020 |
Hardware reliability and fault tolerance
radiation effects |
0.3 | 1 | 2017 | Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor · Sci. China Inf. Sci. 2017 |
Memory systems
non-volatile memory |
0.2 | 1 | 2023 | Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications · Sci. China Inf. Sci. 2023 |
Hardware reliability and fault tolerance › radiation effects
total ionizing dose effects |
0.2 | 1 | 2022 | Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance › soft errors
single event transient |
0.1 | 1 | 2020 | Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020 |
Hardware reliability and fault tolerance
soft errors |
0.1 | 1 | 2020 | Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020 |
Methods — techniques the papers use, named apart from their topics
TCAD simulation · 0.8material characterization · 0.6
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | An AND-type 1T-FeFET array with robust write and read operations
Haoji Qian, Jiani Gu, Gaobo Lin, Rongzong Shen, Xinda Song, Yian Ding, Minglei Ma, Gaobo Xu, Huaxiang Yin, Chengji Jin, Genquan Han |
Sci. China Inf. Sci. | 17 |
| 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs
Zhaohao Zhang, Jiaxin Yao, Qingzhu Zhang, Gaobo Xu, Genquan Han, Huaxiang Yin |
Sci. China Inf. Sci. | 5 |
| 2023 | Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Zhaohao Zhang, Guoliang Tian, Jiali Huo, Qingzhu Zhang, Gaobo Xu, Huaxiang Yin |
Sci. China Inf. Sci. | 6 |
| 2022 | Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Xueqin Yang, Yannan Xu, Jinshun Bi, Linjie Fan, Lanlong Ji, Gaobo Xu |
Sci. China Inf. Sci. | 7 |
| 2020 | Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
Guoliang Tian, Jinshun Bi, Gaobo Xu, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang 0006 |
Sci. China Inf. Sci. | 3 |
| 2017 | Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Yannan Xu, Jinshun Bi, Gaobo Xu, Bo Li 0051, Ming Liu 0022 |
Sci. China Inf. Sci. | 3 |