Sunmean Kim

dblp:214/9901 · DBLP profile ↗
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4ranked-venue papers
1as first author
3since 2021 · last 2026
0000-0001-8240-5658ORCID · verified

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 4 · 1 first-author · 3 since 2021Software engineering, systems software and programming languages · 1 · 1 since 2021
YearPublicationVenuePosition
2026 A16K: 1.6nm NSFET, FSFET, and CFET Technology Libraries for Chip-Level VLSI Prediction
Hwiryong Kim, Hanmok Park, Mingyun Sun, Yongjin Kwon, Jiyoon Jung, Gahyeon Kim, Gyeongjin Kim, Sein Kang, Sunmean Kim, Taigon Song
ISCAS9
2022 Design and Evaluation Frameworks for Advanced RISC-based Ternary Processor
abstract
In this paper, we introduce the design and veri-fication frameworks for developing a fully-functional emerging ternary processor. Based on the existing compiling environments for binary processors, for the given ternary instructions, the software-level framework provides an efficient way to convert the given programs to the ternary assembly codes. We also present a hardware-level framework to rapidly evaluate the performance of a ternary processor implemented in arbitrary design technology. As a case study, the fully-functional 9-trit advanced RISC-based ternary (ART-9) core is newly developed by using the proposed frameworks. Utilizing 24 custom ternary instructions, the 5-stage ART-9 prototype architecture is successfully verified by a number of test programs including dhrystone benchmark in a ternary domain, achieving the processing efficiency of 57.8 DMIPS/W and$3.06\times 10^{6}$DMIPS/W in the FPGA-level ternary-logic emulations and the emerging CNTFET ternary gates, respectively.
Dongyun Kam, Jung Gyu Min, Jongho Yoon 0001, Sunmean Kim, Seokhyeong Kang, Youngjoo Lee 0002
DATE4
2021 Design and Analysis of a Low-Power Ternary SRAM
abstract
This paper proposes the design of a ternary inverter that uses low current as input voltage is VDD/2. When the supply voltage is set to 1 V, current supplied by a voltage source as an input voltage VDD/2 is reduced by 22.75% from 1.89μA to 1.46μA. By connecting ternary inverters back-to-back, a trit-storage element is implemented as a ternary SRAM cell. This paper also presents the first verification of read/write schemes that consider noise margins.
Youngchang Choi, Sunmean Kim, Kyongsu Lee, Seokhyeong Kang
ISCAS2
2018 An optimal gate design for the synthesis of ternary logic circuits
abstract
Over the last few decades, CMOS-based digital circuits have been steadily developed. However, because of the power density limits, device scaling may soon come to an end, and new approaches for circuit designs are required. Multi-valued logic (MVL) is one of the new approaches, which increases the radix for computation to lower the complexity of the circuit. For the MVL implementation, ternary logic circuit designs have been proposed previously, though they could not show advantages over binary logic, because of unoptimized synthesis techniques. In this paper, we propose a methodology to design ternary gates by modeling pull-up and pull-down operations of the gates. Our proposed methodology makes it possible to synthesize ternary gates with a minimum number of transistors. From HSPICE simulation results, our ternary designs show significant power-delay product reductions; 49 % in the ternary full adder and 62 % in the ternary multiplier compared to the existing methodology. We have also compared the number of transistors in CMOS-based binary logic circuits and ternary device-based logic circuits.
Sunmean Kim, Taeho Lim, Seokhyeong Kang
ASP-DAC1