Quantized Convolutional Neural Network (QCNN) is an attractive approach that reduces hardware overheads, especially for energy-constrained systems. However, existing QCNNs still require non-trivial hardware resources and memory capacity in order not to compromise model accuracy. To address this issue, we propose an antiferromagnetic magnetic random-access memory (ARAM)-based processing-in-memory (PIM) system, leveraging bit-level sparsity. Three optimization techniques are proposed to optimize hardware resource utilization while preserving CNN accuracy. Firstly, the ARAM-based memory subsystem allows dynamic adaptation of variable bit-width across CNN layers. Secondly, the bit-level accelerator employs the bit-fusion format engineered for processing data from the ARAM subsystem. Thirdly, a customized data path within the RISC-V core guarantees efficient instruction processing to the ARAM-based memory subsystem and bit-level accelerator, enabling optimal bit-level data transmission and computation. Experimental results demonstrate that this design remarkably reduces data movement by 50%-83% across existing CNNs. Compared to state-of-the-art designs, it enhances throughput and latency by an average of 5x and 10x, respectively. In addition, this design achieves speedups between 1.63x and 2.96x, outstripping other designs in AlexNet, VGG16, and ResNet18 benchmarks.

From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR), their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up the information era over the past decades. However, the growing demand for big-data storage and processing is limited by the von-Neumann architecture due to the memory bottleneck and power dissipation. Taking advantage of nonvolatility, high speed, and low power, magnetic random access memory (MRAM) becomes a promising candidate to overcome this limitation through processing-in-memory (PIM) architectures. In this article, we provide an overview of existing technology and give a roadmap of spintronic devices for future energy-efficient computing and its relevant integration architectures. We begin with the fundamentals of Toggle-MRAM and spin-transfer torque (STT)-MRAM, which already have commercial applications. We then introduce spin-orbit torque (SOT), a critical mechanism to realize low-power data manipulation in the next generation of MRAM and summarize the recent experimental breakthroughs of field-free SOT switching schemes. Finally, we present MRAM-based PIM architectures and novel spintronic devices, provide an application outlook, and deliver the future development potential of energy-efficient computing systems.

Racetrack memory (RM), a new storage scheme in which information flows along a nanotrack, has been considered as a potential candidate for future high-density storage device instead of hard disk drive (HDD). The first RM technology, which was proposed in 2008 by IBM, relies on a train of opposite magnetic domains separated by domain walls (DWs), named DW-RM. After 10 years of intensive research, a variety of fundamental advancements has been achieved; unfortunately, no product has been available until now. With increasing effort and resources dedicated to the development of DW-RM, it is likely that new materials and mechanisms will soon be discovered for practical applications. However, new concepts might also be on the horizon. Recently, an alternative information carrier, magnetic skyrmion, which was experimentally discovered in 2009, has been regarded as a promising replacement of DW for RM, named skyrmion-based RM (SK-RM). Intensive effort has been involved and amazing advances have been made in observing, writing, manipulating, and deleting individual skyrmions. So, what is the relationship between DW and skyrmion? What are the key differences between DW and skyrmion, or between DW-RM and SK-RM? What benefits could SK-RM bring and what challenges need to be addressed before application? In this review article, we intend to answer these questions through a comparative cross-layer study between DW-RM and SK-RM. This work will provide guidelines, especially for circuit and architecture researchers on RM.

Magnetic skyrmions are swirling topological configurations, which are mostly induced by chiral interactions between atomic spins in non-centrosymmetric magnetic bulks or in thin films with broken inversion symmetry. They hold promise as information carriers in future ultra-dense, low-power memory and logic devices owing to the nanocale size and extremely low spin-polarized currents needed to move them. To date, an intense research effort has led to the identification, creation/annihilation, motion and manipulation of skyrmions at room temperature. Meanwhile, a rich variety of skyrmion-based device concepts and prototypes have been proposed, indicating the considerable potential of magnetic skyrmions in future electronic applications. However, current studies mainly focus on physical or principle investigations, whereas the electrical design methodology, implementation and evaluations are still lacking. In this paper, we will bring the readers in the “design, automation and test (DAT) society” the current status and outlook of skyrmions in relation to future potential racetrack memory and neuromorphic computing applications. Most importantly, we also want to evoke the effort from the DAT society to address the challenges, e.g., all-electrical manipulation of skyrmions at room temperature, for the research and development of practical skyrmion-based electronics.