EDBT 2026 Demo / reviewers in the wild / expert
Minxi Cai
dblp:219/8933
· DBLP profile ↗
3ranked-venue papers
2as first author
1since 2021 · last 2025
0000-0001-5307-7341ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 first-authorGraphics, computer vision, multimedia, augmented reality and games · 1 · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › transistor
thin film transistor |
0.7 | 2 | 2019 | A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs · Sci. China Inf. Sci. 2019 A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors · Sci. China Inf. Sci. 2018 |
Integrated circuit design › semiconductor devices › multi-gate devices
dual-gate transistor |
0.3 | 1 | 2018 | A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors · Sci. China Inf. Sci. 2018 |
Integrated circuit design › semiconductor device modeling
threshold voltage modeling |
0.3 | 1 | 2018 | A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors · Sci. China Inf. Sci. 2018 |
Integrated circuit design › analog and mixed-signal circuits
device modeling |
0.2 | 2 | 2019 | A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs · Sci. China Inf. Sci. 2019 A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors · Sci. China Inf. Sci. 2018 |
Methods — techniques the papers use, named apart from their topics
channel-potential model · 0.4drain current model · 0.3
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | DBG-YOLO: Efficient detection of hidden dangers of manhole covers based on deep learning YOLO network
Dingbang Guo, Piaorong Xu, Minxi Cai, Exian Liu, Zhengping Shan |
Multim. Tools Appl. | 3 |
| 2019 | A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs
Minxi Cai, Ruohe Yao |
Sci. China Inf. Sci. | 1 |
| 2018 | A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors
Minxi Cai, Ruohe Yao |
Sci. China Inf. Sci. | 1 |