Cryogenic CMOS is a promising technology for high performance computing due to its improvement in subthreshold slope, carrier mobilities and reduced wire resistance. The threshold voltage (Vth) increase at 77K can be mitigated by metal gate work function (PHIG) engineering to achieve matched off current (Ioff) further enhancing the device performance allowing us to operate at very low supply voltage thereby reducing the Energy Delay Product (EDP). However, the effect of variation on noise margins of static random access memories (SRAM) deploying these matched Ioff devices is very prominent especially at low supply voltages (Vdd) limiting its scaling. In this work, we propose a framework to perform Vth retargeting for cryogenic SRAM for improving noise margins in high performance cryogenic SRAM cells under variation. The proposed framework comprises of a Monte-Carlo engine which performs statistical analysis and DC characterization and a backend processing engine to analyze noise margins and tune the PHIG. To demonstrate the framework, we use calibrated 14nm FinFET models at 300K and 77K. First, we analyze the logic blocks using iso-Ioff devices, which yield up to 3x improvement in delay at iso-energy and a 4.5x reduction in energy at iso-delay. Next, we study the effect of Vth variation on the device currents. Finally, the framework is deployed to tune PHIG, and results show that it can enhance the noise margins by 23%, 31% and 19% for hold, read and write operations respectively at 77K compared to iso-Ioff devices. Further, a 1kb SRAM array has been simulated using iso-Ioff tuned peripherals and framework tuned SRAM cells, and it shows 5.4x reduction in read/write energies along with 1.2x delay reduction and better noise margins at 77K compared to 300K.

This paper introduces a Computing-In-Memory based Spiking Neural Network (SNN) architecture for cryogenic operation of CMOS (Cryo-SNN). The paper demonstrates design strategies to improve energy efficiency of Cryo-SNN by coupling low-voltage operation at cryogenic temperature with innovative design of neuron circuits optimized for cryogenic conditions. By exploiting the enhanced device characteristics of 14 nm FinFET transistors at cryogenic temperatures, our architecture outlines critical adaptations to SNN components for optimal functionality in extreme environments. The circuit simulation using measurement calibrated 14nm FinFET models shows that a Cryo-SNN designed for MNIST classification operates with 4.54X improved energy-delay-product (EDP) over room temperature operation while maintaining similar accuracy. Further, the paper designs an optimized SNN architecture for autonomous health monitoring of miniaturized satellites at cryogenic temperature consuming less than 1mW of power.

In this article, we develop a Verilog-A implementable compact model for the dynamic switching of ferroelectric FinFETs (Fe-FinFETs) for asymmetric nonperiodic input signals. We use the multidomain Preisach Model to capture the saturated$P$–$E $loop of the ferroelectric capacitors. In addition to the saturation loop, we model the history-dependent minor loop paths in the$P$–$E $by tracing input signals’ turning points. To capture the input signals’ turning points, we propose an RC circuit-based approach in this work. We calibrate our proposed model with the experimental data, and it accurately captures the history effect and minor loop paths of the ferroelectric capacitor. Furthermore, the elimination of storage of each turning point makes the proposed model computationally efficient compared with the previous implementations. We also demonstrate the unique electrical characteristics of Fe-FinFETs by integrating the developed compact model of Fe-Cap with the BSIM-CMG model of the 7-nm FinFET.

Ferroelectric field-effect transistor (FeFET)-based circuit implementation mimicking FitzHugh-Nagumo neuron is proposed in this work. The proposed circuit is shown to mimic biological neuron properties, such as excitation block and anodal break excitation which are not mimicked by an integrate and fire neuron model. We also show a winner-take-all circuit that can be used with this proposed neuron implementation. The neuron implementation requires just one FeFET, three baseline field-effect transistors, and one capacitor, making it area and energy-efficient. The neuron circuit, with minimum sized transistors, consumes approximately 10 pJ per spike. The neuron’s energy consumption per spike can be reduced to as low as 100 fJ by designing some of the transistors with aspect ratio less than one.