Marios Neofytou

dblp:228/3891 · DBLP profile ↗
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5ranked-venue papers
2as first author
3since 2021 · last 2025
—ORCID · none

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Systems, architecture and hardware · 5 · 2 first-author · 3 since 2021
YearPublicationVenuePosition
2025 A 4-Element Passive-Beamforming CT- ΔΣ ADC for Spatial Selectivity in Automotive Radar
abstract
This work demonstrates the benefit of spatial selectivity that a 4-element passive-beamforming continuous-time ADC can offer for the extreme dynamic range requirements in automotive radar. The beamforming-ADC is implemented in 40nm CMOS by R2R-based vector modulators as feed-in coefficients in combination with low-power implementations of a 4th-order inverter-based loop-filter, 4-bit asynchronous SAR-based quantizer and 4-bit current-steering feedback DACs. This work obtains >30dB of interferer suppression when deep notches are formed to obtain an effective spatial blocker dynamic range of 73.1dB. With notch-smoothing, the versatility to reduce the peak-to-notch-depth to 8dB for channel equalization is demonstrated. The beamforming-ADC consumes 7.3mW.
Remco Schalk, Zitao Zhu, Marios Neofytou, Patrick van Mourik, Shagun Bajoria, Georgi I. Radulov, Lucien J. Breems
IEEE Trans. Circuits Syst. I Regul. Pap.3
2021 Time Interleaved ADC Mismatch Error Correction Technique in I/Q Digital Beamforming Receivers
Pavlos Athanasiadis, Marios Neofytou, Marcello Ganzerli, Georgi I. Radulov, Kostas Doris
ISCAS2
2021 A Novel 2-Dimensional Correction Method for mm-Wave Cartesian I/Q Modulators
abstract
This paper proposes a self-corrected In- phase/Quadrature-phase (I/Q) digital Cartesian modulator. The modulator is comprised of double balanced Gilbert cells to mitigate code dependent input and output impedances. Transistor-level simulations in 28 nm bulk CMOS demonstrate a static error vector magnitude (EVM) of -35 dB at 79 GHz carrier while providing 9.5 dBm peak output power with ~19% drain efficiency. Transistor level analysis shows that the linearity is limited by the transconductance (gm) I and Q input code dependency. To address this dependency a self-contained 2-dimensional correction technique is proposed.The proposed correction method improves the EVM from -35 dB to -42.5 dB without compromising the output power, power efficiency and occupied silicon area. The proposed solution enables linear and power efficient transmitters (TXs) for mm-Wave applications.
Marios Neofytou, Pavlos Athanasiadis, Marcello Ganzerli, Maarten Lont, Georgi I. Radulov, Kostas Doris
ISCAS1
2018 A 1.9 mW 250 MHz Bandwidth Continuous-Time ΣΔ Modulator for Ultra-Wideband Applications
abstract
This paper proposes an architecture design approach for a wideband continuous-time (CT) ΣΔ modulator with ultra-low oversampling ratio (OSR). The ultra-low OSR is beneficial in terms of power consumption for both the clock distribution network and the subsequent decimation filter. In this work, three signal feedforward paths and an additional feedback path are used to reduce the power consumption. Extensive system-level simulations demonstrate the effectiveness of the proposed solutions. Furthermore, this work verifies the proposed methods by transistor-level design and simulations of a 2 GHz 4th-order CT ΣΔ modulator achieving an SNDR of 46 dB in a signal band of 250 MHz while consuming only 1.91 mW of power in 40 nm CMOS. The proposed solutions enable CT ΣΔ modulators for low power ultra-wideband (UWB) applications.
Marios Neofytou, Meiyi Zhou, Muhammed Bolatkale, Chenming Zhang, Georgi I. Radulov, Peter G. M. Baltus, Lucien J. Breems
ISCAS1
2018 A 2 GHz 0.98 mW 4-bit SAR-Based Quantizer with ELD Compensation in an UWB CT ΣΔ Modulator
abstract
This paper presents a 2 GHz 4-bit asynchronous successive approximation register (SAR) quantizer to enable an ultra-wideband continuous-time (CT) sigma-delta modulator (SDM). Low latency is required for the stability of the SDM. The excess-loop-delay compensation (ELDC) is embedded in the SAR quantizer by adding an extra switched-capacitor DAC segment with two separate reference voltages. To achieve high speed, a gm-boosted StrongARM latch and the monotonic switching scheme are used. This paper presents the transistor-level circuit implementation and the complete verification of the CT SDM. Simulation results show the power consumption of this SAR-based quantizer including ELDC is 0.98 mW, leading to a very competitive Figure-of-Merit of 30.6 fJ/conv.-step.
Meiyi Zhou, Marios Neofytou, Muhammed Bolatkale, Chenming Zhang, Pierluigi Cenci, Georgi I. Radulov, Peter G. M. Baltus, Lucien J. Breems
ISCAS2