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EDBT 2026 Demo / reviewers in the wild / expert

J. G. Simmons

dblp:24/3584 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1982
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Electronic design automation · 50% Integrated circuit design · 50%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation
circuit simulation		 0.011982
A Description of MOS Internodal Capacitances for Transient Simulations · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1982
Integrated circuit design › analog and mixed-signal circuits
device modeling		 0.011982
A Description of MOS Internodal Capacitances for Transient Simulations · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1982
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOS capacitance model		 0.011982
A Description of MOS Internodal Capacitances for Transient Simulations · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1982
Electronic design automation › circuit simulation
transient analysis		 0.011982
A Description of MOS Internodal Capacitances for Transient Simulations · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1982

Methods — techniques the papers use, named apart from their topics

velocity saturation model · 0.0transient simulation · 0.0
YearPublicationVenuePosition
1982 A Description of MOS Internodal Capacitances for Transient Simulations
abstract
Charge versus voltage and internodal capacitance versus voltage characteristics are calculated for a short-channel MOSFET using a unified model of the dc device behavior. Velocity saturation is an important feature in the results. The importance of charge and capacitance calculations is assessed using a high speed MOS transient simulation. Device current and gate charge are determined to be the important ingredients for accurate simulation.
Geoffrey W. Taylor, Wolfgang Fichtner, J. G. Simmons
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.3