Three-dimensional (3-D) printing, also known as additive manufacturing, provides a novel and cost-effective approach for implementing microwave devices. With the rapid advancement and improved manufacturing resolution of the 3-D printing technology, additive manufacturing has enabled the design and fabrication of electronic devices in higher terahertz (THz) frequency bands, contributing to bridging the gap between microwaves and photonics. Simultaneously, metalenses have garnered significant attention due to their ability to shape electromagnetic (EM) wavefronts. Metalens technology offers a promising solution for wave focusing, surpassing traditional dielectric lenses with advantages such as reduced weight and low loss, particularly at THz frequencies. In this article, we present an overview of the development of 3-D-printed THz metalenses, ranging from single metalenses to dual-layer and trilayer configurations. The functionality of the metalenses becomes more powerful, from replacing conventional light-focusing dielectric lenses for single-layer metalenses, achieving 2-D beam scanning, holographic imaging, and reconfigurable orbital angular momentum (OAM) for dual-layer metalenses, to enabling 3-D focus scanning for trilayer metalenses. We also discuss practical measurement technologies for THz metalenses and briefly outline the prospective to propel the 3-D-printed metalens technology forward.

Structured interfaces with subwavelength features enable modulations of phase, amplitude, and polarization on demand, leading to a plethora of flat-profile devices and metasurfaces. Plasmonic and dielectric metasurfaces have been intensively explored, building up the frameworks of flat optics for ultrathin and integrated nanophotonics. The in situ controllability and tunability of aforementioned family of metasurfaces, however, has been a grand challenge, due to the intrinsic limitations of the materials. Semiconductors with diversified catalogs of material candidates thus demonstrate promising potentials, owing to the mature and versatile technologies developed nowadays. The fuse of semiconductors and nanostructured metasurfaces has been witnessed more recently, paving a distinct avenue toward active, tunable, reconfigurable light manipulation for next-generation optical nanodevices. Judicious selection of the active materials for metasurfaces empowers the active functionality of the designer applications. This paper presents a review of this merging semiconductor paradigm for active metasurfaces across a wide range of spectrum and shows unprecedented potentials in the future interface-based optoelectronics, quantum optics, nano-optics, and surface engineering with full compatibility of semiconductor foundry.