Matrix converters can provide unprecedented power densities in bidirectional AC/AC conversion. For the wide majority of applications matrix converters are used as step-down converters as its input capacitors are coupled via low impedances to voltage sources. However, several applications such as electrical generators or solid-state transformers could benefit from step-up capabilities where the matrix converter may operate as a grid forming converter. Still, matrix converters in boost mode operation behave as non-minimum phase systems creating additional control challenges. To address these challenges this paper proposes the use of a boost matrix converter configuration with a 3rd order output filter, where input currents and output voltages are tracked with a predictive controller combined with a proportional integral controller to compensate the power losses of the converter.

The increase of renewable energy penetration to the grid is leading to a massive increase in grid connected power converters. Most of these converters use passive filters to mitigate the harmonic content produced by their switching behaviour to comply with international standards. The design of these filters is known to be an arduous task typically involving experienced designers. This work proposes a grid connected filter design methodology which is formulated as a multi-objective optimization problem in a way that a genetic algorithm can be used to attain a desired filter response, while minimizing the energy stored in the filter. The proposed method is applied for the design of the input filter of a grid tied matrix converter. A pareto front is obtained and a filter solution is selected for which simulations are preformed to evaluate the resultant THD.

A leakage tolerant commutation method is proposed that enables the use of matrix converters in Solid State Transformers with three-phase high/medium frequency isolation transformers. Typical commutation methods for matrix converters such as two and four step commutation methods are not suitable in the presence of leakage inductances since they do not allow the recirculation of the leakage energy, this means that when using such methods it is necessary to use snubbers and clamping circuits to mitigate potential overvoltages on the transformer. The proposed commutation method does not require any additional circuitry and is suitable for multiphase converters. A systematic description of the process is provided along with simulation results that validate the proposed commutation method.

A novel structure of matrix-converter-based Smart Transformer (MC-ST) is proposed for hybrid microgrid applications. The conventional ST structure in hybrid microgrid normally consists of two different kinds of modules: cascaded H-bridges (CHBs) and dual active bridges (DABs). For reliability and simplicity, the modularity concept is employed in the proposed structure to obtain only one kind of module. Utilizing the feature of matrix converters as the universal converters, the proposed ST can transfer AC input to AC output as well as to DC output using the same module and same modulation method. Moreover, in order to implement the proposed ST, feedback control of low voltage AC (LVAC) and low voltage DC (LVDC) is implemented. Simulation results show that the proposed MC-ST is feasible and has a potential application in the future hybrid microgrid.

Wideband-gap semiconductor devices are rapidly gaining ground in power converters in a wide variety of applications, given their ability to block higher voltages, compared to typical devices, with lower on-state voltages. The characterization of losses for Gallium Nitride (GaN) or Silicon Carbide (SiC) semiconductor devices, in particular for inverter operation, is not straightforward, specially taking into consideration that the typical losses values provided by manufacturers are obtained in direct current (DC) for a given current and voltage. This paper measures the average dissipated power in inverter operation for different input voltages and different output currents of two promising devices, SiC MOSFET and GaN HEMT, chosen from two leading manufacturers. The losses measurement is obtained indirectly by the direct measurement of the devices temperature.