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Sandip Majumdar

dblp:256/6337 · DBLP profile ↗
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3ranked-venue papers
0as first author
1since 2021 · last 2021
—ORCID · conflict

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 3 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
3 papers
Hardware reliability and fault tolerance · 47% Integrated circuit design · 31% Memory systems · 22%

Topics — the 8 heaviest of 8, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Memory systems
non-volatile memory		 0.622021
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021
Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019
Integrated circuit design › semiconductor devices › semiconductor device design
transistor design		 0.412020
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020
Integrated circuit design › emerging device technologies
tunneling field effect transistor		 0.412020
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020
Hardware reliability and fault tolerance
radiation effects		 0.412019
Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019
Hardware reliability and fault tolerance › radiation effects
total ionizing dose effects		 0.412019
Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019
Hardware reliability and fault tolerance
soft errors		 0.322021
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020
Hardware reliability and fault tolerance › radiation effects
single event effects		 0.112021
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021
Hardware reliability and fault tolerance › soft errors
single event transient		 0.112020
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020

Methods — techniques the papers use, named apart from their topics

simulation · 0.5graphene-based charge-trapping memory · 0.4
YearPublicationVenuePosition
2021 Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design
Jianjian Wang, Jinshun Bi, Bo Li 0051, Sandip Majumdar, Lanlong Ji, Ming Liu 0022, Zhangang Zhang
 Sci. China Inf. Sci.7
2020 Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
Guoliang Tian, Jinshun Bi, Gaobo Xu, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang 0006
 Sci. China Inf. Sci.6
2019 Total ionizing dose effects on graphene-based charge-trapping memory
Jinshun Bi, Sandip Majumdar, Bo Li 0051, Jing Liu 0035, Yannan Xu, Ming Liu 0022
 Sci. China Inf. Sci.3