We present a hybrid, general-purpose, associative processing-in-memory architecture that combines the energy and area advantages of a primary FeFET-based CAM array with the write performance and endurance of a much smaller CMOS-based sidekick. The hybrid nature of the architecture is transparent to the programmer, who uses a RISC-V ISA with standard RVV vector extensions. Detailed SPICE- and system-level simulations show our hybrid design dramatically curbs the endurance disadvantages of a pure FeFET design and delivers, on average, 30% and 11% area and energy savings over a purely CMOS implementation, respectively, at a performance loss of barely 1% over pure CMOS.

Content addressable memories (CAMs) are special-purpose in-memory computing units that support parallel searches directly in memory. There is growing interest in CAMs for data-intensive applications such as machine learning, data mining, and bioinformatics, which has led to a rapidly growing CAM design space. CAM cells can be implemented exclusively by CMOS or with various non-volatile memory (NVM) devices. In addition to traditional binary and ternary CAMs (BCAMs and TCAMs), analog CAM (ACAM) and multi-bit CAM (MCAM) designs have recently been introduced, which could further improve density, and also support unique in-memory distance functions. Furthermore, aside from the widely-used exact match function, CAM-based approximate match functions, such as threshold match and best match, have been proposed to further extend the utility of CAMs to new application spaces. As the CAM design space is large, evaluating different CAM design options for a given application is both crucial and challenging. This paper presents EvaCAM, a circuit-level modeling and evaluation tool for CAMs. EvaCAM supports TCAM, ACAM, and MCAM designs implemented in either CMOS or NVMs, for both exact and approximate match functions. It also allows for the exploration of different CAM designs under various optimization targets. EvaCAM has been validated against measured data from fabricated chips and detailed SPICE simulations. A comprehensive design space exploration for CAMs is provided to illustrate the impact of various design decisions and to demonstrate the use cases of EvaCAM.

There is great interest in “end-to-end” analysis that captures how innovation at the materials, device, and/or archi-tectural levels will impact figures of merit at the application-level. However, there are numerous combinations of devices and architectures to study, and we must establish systematic ways to accurately explore and cull a vast design space. We aim to capture how innovations at the materials/device-level may ultimately impact figures of merit associated with both existing and emerging technologies that may be employed for either logic and/or memory. We will highlight how collaborations with researchers at these levels of the design hierarchy - as well as efforts to help construct well-calibrated device models - can in-turn support architectural design space explorations that will help to identify the most promising ways to use new technologies to support application-level workloads of interest. For given compute workloads, we can then quantitatively assess the potential benefits of technology-driven architectures to identify the most promising paths forward. Because of the large number of potentially interesting device-architecture combinations, it is of the utmost importance to develop well-calibrated analytical modeling tools to more rapidly assess the potential value of a given (likely heterogeneous) solution. We highlight recent efforts and needs in this space.

On-device learning is essential to achieve intelligence at the edge, where it is desirable to learn from few samples or even just a single sample. Memory-augmented neural networks (MANNs), which augment neural networks with an attentional memory, can draw on already learnt knowledge patterns and adapt to new but similar tasks. Implementing MANNs on conventional architectures can require a significant amount of costly data transfer, thereby limiting the practical use of MANNs at the edge. In this paper, we introduce algorithm/hardware co-design solutions which exploit compact designs of content addressable memories (CAMs) based on emerging non-volatile memories (e.g., FeFETs) to implement energy-efficient MANN accelerators. The design space of MANN accelerators is systematically analyzed by considering different circuit, architecture, and algorithm options. We further discuss how hyper-dimensional representations of data can be combined with MANNs to overcome the negative effect of device/circuit variabilities on learning quality, thus achieving not only energy-efficient but also accuracy-competitive on-device learning at the edge. We also investigate modeling of device-to-device (D2D) variation in FeFETs using the write-with-verify approach and detail its impact on the energy, delay, and accuracy of the MANN application.

Pattern searches, a key operation in many data analytic applications, often deal with data represented by multiple states per dimension. However, hash tables, a common software-based pattern search approach, require a large amount of additional memory, and thus, are limited by the memory wall. A hardware-based solution is to use content-addressable memories (CAMs) that support fast associative searches in parallel. Ternary CAMs (TCAMs) support bit-wise Hamming distance (HD) based searches. Detecting the HD of vectors with multiple states per dimension (i.e., multi-state Hamming distance (MSHD)) can be implemented on TCAMs with one-hot encoding, but requires one TCAM cell per state, leading to a higher area, latency, and energy overhead. We propose a Ferroelectric FET (FeFET)-based multi-state CAM design, MHCAM, which implements MSHD searches in a dense FeFET-based memory array. MHCAM only uses$\lceil log_{2} s \rceil ~2$FeFET CAM cells to represent$s$states or symbols per dimension, and can be reconfigured to 2-bit/4-bit/6-bit/8-bit dimensions. A low-cost sensing circuit with matchline voltage scaling technique is introduced to perform both exact match and threshold match. We use DNA and protein pre-alignment filtering as application case studies to evaluate the application-level benefit of MHCAM. DNA and protein pre-alignment filtering achieve$3.8\times /4.7\times $speedup and$1.7\times /1.8\times $energy improvement compared with the state-of-the-art 2FeFET TCAM-based implementation.

Content addressable memories (CAMs), a special-purpose in-memory computing (IMC) unit, support parallel searches directly in memory. There are growing interests in CAMs for data-intensive applications such as machine learning and bioinformatics. The design space for CAMs is rapidly expanding. In addition to traditional ternary CAMs (TCAMs), analog CAM (ACAM) and multi-bit CAM (MCAM) designs based on various non-volatile memory (NVM) devices have been recently introduced and may offer higher density, better energy efficiency, and non-volatility. Furthermore, aside from the widely-used exact match based search, CAM-based approximate matches have been proposed to further extend the utility of CAMs to new application spaces. For this memory architecture, evaluating different CAM design options for a given application is becoming more challenging. This paper presents Eva-CAM, a circuit/architecture-level modeling and evaluation tool for CAMs. Eva-CAM supports TCAM, ACAM, and MCAM designs implemented in non-volatile memories, for both exact and approximate match types. It also allows for the exploration of CAM array structures and sensing circuits. Eva-CAM has been validated with HSPICE simulation results and chip measurements. A comprehensive case study is described for FeFET CAM design space exploration.

Nearest neighbor (NN) search computations are at the core of many applications such as few-shot learning, classification, and hyperdimensional computing. As such, efficient hardware support for NN search is highly desired. In-memory computing using emerging devices offers attractive solutions for NN search. Solutions based on ternary content-addressable memories (TCAMs) offer high energy and latency improvements for NN search at the expense of accuracy. In this work, we propose a novel distance function that can be natively evaluated with multi-bit content-addressable memories (MCAMs) based on ferroelectric FETs (FeFETs) to perform a single-step, in-memory NN search. We evaluate the efficacy of FeFET MCAMs in the context of few-shot learning applications with different datasets. As an example, we achieve a 78.54% accuracy for a 5-way, 5-shot classification task for the mini-ImageNet dataset (only 1.5% lower than software-based implementations) when using a 3-bit MCAM for NN search. We consider the effects of FeFET threshold voltage variations on the application accuracy and analyze the area and search energy requirements of FeFET MCAMs for accurate operations. Our results indicate that MCAMs require 2× lower area and search energy than TCAMs to achieve the same accuracy. Furthermore, we experimentally demonstrate a 2-bit implementation of FeFET MCAM using AND arrays from GLOBALFOUNDRIES to further validate the design concept.

Nearest neighbor (NN) search is an essential operation in many applications, such as one/few-shot learning and image classification. As such, fast and low-energy hardware support for accurate NN search is highly desirable. Ternary content-addressable memories (TCAMs) have been proposed to accelerate NN search for few-shot learning tasks by implementing$L$∞and Hamming distance metrics, but they cannot achieve software-comparable accuracies. This paper proposes a novel distance function that can be natively evaluated with multi-bit content-addressable memories (MCAMs) based on ferroelectric FETs (Fe-FETs) to perform a single-step, in-memory NN search. Moreover, this approach achieves accuracies comparable to floating-point precision implementations in software for NN classification and one/few-shot learning tasks. As an example, the proposed method achieves a 98.34% accuracy for a 5-way, 5-shot classification task for the Omniglot dataset (only 0.8% lower than software-based implementations) with a 3-bit MCAM. This represents a 13% accuracy improvement over state-of-the-art TCAM-based implementations at iso-energy and iso-delay. The presented distance function is resilient to the effects of FeFET device-to-device variations. Furthermore, this work experimentally demonstrates a 2-bit implementation of FeFET MCAM using AND arrays from GLOBALFOUNDRIES to further validate proof of concept.

The rapidly increasing volume and complexity of data is demanding the relentless scaling of computing power. With transistor feature size approaching physical limits, the benefits that CMOS technology can provide is diminishing. For future energy efficient computing systems, researchers aim to exploit various emerging nanotechnologies to replace conventional CMOS technology. In particular, ferroelectric FETs (FeFETs) appear to be a promising candidate to continue improving energy efficiency for data-intensive applications. Advances in FeFET scalability and FeFET compatibility with CMOS have sparked growing interest in device, circuit, and system communities. While FeFET is still evolving, many researchers and developers are already cautiously optimistic about its future. This paper provides a review on FeFET's recent technology advances, challenges, and opportunities, with a particular emphasis upon device modeling and circuit design of FeFET content addressable memory, as well as their applications in machine learning.

Content-addressable memories (CAMs) can perform fast and energy-efficient search operations. Recently, ternary CAMs (TCAMs) have been utilized to measure Hamming distance for machine learning applications, where they offer significant energy savings and speed-ups. However, the binary precision of the Hamming distance can lead to severe degradation in application-level accuracies, thus mitigating the impact of gains with respect to other figures of merit. To enhance accuracy, multi-bit CAMs (MCAMs) have been proposed that offer higher density and energy savings than TCAMs by storing multiple bits in each cell. However, existing MCAMs are based on emerging nonvolatile memory technologies that are yet to be established. To this end, we propose a fast and extremely energy-efficient MCAM based on mature and widely used flash cells, called $\mathrm{E}^{2} -$MCAM. $\mathrm{E}^{2} -$MCAM can measure the Euclidean squared distance between search queries and data stored in the MCAM “in-memory”, and in a single cycle. We evaluate $\mathrm{E}^{2} -$MCAM using an experimentally calibrated flash model in HSPICE with 3-bit precision for proof of concept demonstration. $\mathrm{A}64 \times 32 \mathrm{E}^{2} -$MCAM array achieves a 0.34 fJ energy per bit per search and a 2.7 ns latency while operating at a $770 \mu \mathrm{W}$ power. Fast and efficient hardware support for Euclidean squared distance is highly valuable as it is widely used in a plethora of machine learning applications. As an example, we show that $\mathrm{E}^{2} -$MCAM achieves accuracies comparable to floating-point GPU implementations with only 3-bit precision for few-shot learning tasks with the ImageNet dataset while offering improvements in energy and latency.

Hyperdimensional Computing (HDC) is an emerging computational framework that mimics important brain functions by operating over high-dimensional vectors, called hypervectors (HVs). In-memory computing implementations of HDC are desirable since they can significantly reduce data transfer overheads. All existing in-memory HDC platforms consider binary HVs where each dimension is represented with a single bit. However, utilizing multi-bit HVs allows HDC to achieve acceptable accuracies in lower dimensions which in turn leads to higher energy efficiencies. Thus, we propose a highly accurate and efficient multi-bit in-memory HDC inference platform called MIMHD. MIMHD supports multi-bit operations using ferroelectric field-effect transistor (FeFET) crossbar arrays for multiply-and-add and FeFET multi-bit content-addressable memories for associative search. We also introduce a novel hardware-aware retraining framework (HWART) that trains the HDC model to learn to work with MIMHD. For six popular datasets and 4000 dimension HVs, MIMHD using 3-bit (2-bit) precision HVs achieves (i) average accuracies of 92.6% (88.9%) which is 8.5% (4.8%) higher than binary implementations; (ii) 84.1× (78.6×) energy improvement over a GPU, and (iii) 38.4×(34.3×) speedup over a GPU, respectively. The 3-bit MIMHD is 4.3× and 13× faster and more energy-efficient than binary HDC accelerators while achieving similar accuracies.

The memory wall bottleneck is a key challenge across many data-intensive applications. Multi-level FeFET-based embedded non-volatile memories are a promising solution for denser and more energy-efficient on-chip memory. However, reliable multi-level cell storage requires careful optimizations to minimize the design overhead costs. In this work, we investigate the interplay between FeFET device characteristics, programming schemes, and memory array architecture, and explore different design choices to optimize performance, energy, area, and accuracy metrics for critical data-intensive workloads. From our cross-stack design exploration, we find that we can store DNN weights and social network graphs at a density of over 8MB/mm2and sub-2ns read access latency without loss in application accuracy.

Side-channel attacks (SCAs) represent a significant security threat, and aim to reveal otherwise secret data by analyzing a relevant circuit's behavior, e.g., its power consumption. While all circuit components are potential power side channels, D-flip-flops (DFFs) are often the primary source of information leakage to an SCA. This paper proposes a DFF design based on the three-independent-gate field-effect transistor (TTGFET) that reduces side-channel vulnerabilities of sequential circuits. Notably, we find that the I-V characteristics of the TIGFET itself leads to inherent side-channel resilience, which in turn enables simpler and more efficient cryptographic hardware. Our proposed design is based on a prior TIGFET-based true single-phase clock (TSPC) DFF design, which offers high performance and reduced area. More specifically, our modified TSPC (mTSPC) design exploits the symmetric I-V characteristics of TIGFETs, which results in pull-up and pull-down currents that are nearly identical. When combined with additional circuit modifications (made possible by the unique characteristics of the TIGFET), the mTSPC circuit draws almost the same amount of supply currents under all possible input transitions (less than 1% variation for different transitions), which can in turn mask information leakage. Using a 10nm TIGFET technology model, simulation results show that the proposed TIGFET-based DFF circuit leads to decreased power consumption (up to 96.9% when compared to the prior secured designs), has a low delay (15.2 ps), and employs only 12 TIGFET devices. Furthermore, an 8-bit S-box whose output is sampled by a group of eight mTSPC DFFs was simulated. A correlation power analysis attack on the simulated S-box with 256 power traces shows that the key is not revealed, which confirms the SCA resiliency of the proposed DFF design.