Demo Data from EDBT 2026 / reviewers in the wild / expert
Xiaoqiao Dong
dblp:269/1953
· DBLP profile ↗
3ranked-venue papers
1as first author
0since 2021 · last 2020
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
digital circuit design |
0.4 | 1 | 2020 | Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors · Sci. China Inf. Sci. 2020 |
Integrated circuit design
semiconductor device fabrication |
0.4 | 1 | 2020 | High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC) · Sci. China Inf. Sci. 2020 |
Integrated circuit design › semiconductor device modeling
transistor modeling |
0.4 | 1 | 2020 | Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors · Sci. China Inf. Sci. 2020 |
Integrated circuit design › analog and mixed-signal circuits
device modeling |
0.1 | 1 | 2020 | Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors · Sci. China Inf. Sci. 2020 |
Methods — techniques the papers use, named apart from their topics
nisi2 seeding · 0.4
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2020 | A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor
Bocheng Yu, Xiaoqiao Dong, Ru Huang 0001 |
Sci. China Inf. Sci. | 4 |
| 2020 | Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors
Xiaoqiao Dong, Wanrong Zhang 0002, Yuancheng Yang, Xia An |
Sci. China Inf. Sci. | 1 |
| 2020 | High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC)
Yuancheng Yang, Baotong Zhang, Xiaoqiao Dong, Qifeng Cai, Ru Huang 0001 |
Sci. China Inf. Sci. | 3 |