Demonstration venue · read-only. Every page can be browsed; the buttons that would change it are switched off. Create an account to run TaxoReview on your own data. A simulation from public publication records: the people listed were not invited and did not agree to review.
? Tutorial for this page

Xiaoqiao Dong

dblp:269/1953 · DBLP profile ↗
← Back
3ranked-venue papers
1as first author
0since 2021 · last 2020
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 3 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Integrated circuit design · 100%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
digital circuit design
0.412020
Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors · Sci. China Inf. Sci. 2020
Integrated circuit design
semiconductor device fabrication
0.412020
High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC) · Sci. China Inf. Sci. 2020
Integrated circuit design › semiconductor device modeling
transistor modeling
0.412020
Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors · Sci. China Inf. Sci. 2020
Integrated circuit design › analog and mixed-signal circuits
device modeling
0.112020
Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors · Sci. China Inf. Sci. 2020

Methods — techniques the papers use, named apart from their topics

nisi2 seeding · 0.4
YearPublicationVenuePosition
2020 A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor
Bocheng Yu, Xiaoqiao Dong, Ru Huang 0001
Sci. China Inf. Sci.4
2020 Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors
Xiaoqiao Dong, Wanrong Zhang 0002, Yuancheng Yang, Xia An
Sci. China Inf. Sci.1
2020 High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC)
Yuancheng Yang, Baotong Zhang, Xiaoqiao Dong, Qifeng Cai, Ru Huang 0001
Sci. China Inf. Sci.3