Terahertz (THz) communication is a promising technique for chip-to-chip communication and wireless personal area networks. In this paper, we present an experimental study and design to realize such THz communication systems. We develop two different chip sets for on-off-keying (OOK) modulation based THz transceivers which include carrier generators, modulators, THz amplifiers, and baseband amplifiers. Specifically, the first chip set integrates the circuit blocks for the OOK modulation without the THz amplifier for short-range communication. In addition, the second chip set design includes the THz amplifier modules to extend the coverage of transmission. For these two chip sets, we experimentally demonstrate the feasibility of the wireless communication at THz frequency bands and assess performance using the bit error rate (BER) analysis. We estimate the BER by calculating the signal-to-noise ratio (SNR) based on the eye diagram and compare with actual BER measurements and Monte Carlo simulations. We also address the impact of the distance, the transmit power, and the data rate for the proposed THz transceivers based on the link budget analysis, and confirm the accuracy of the derived BER expression.

This paper presents a review of WR-3 band monolithic integrated circuits developed in an InP HBT technology. Envisioning potential applications of terahertz such as short-distance communication, imaging or spectroscopy, various circuit blocks are presented, including power amplifiers, oscillators, mixers, phase shifter, and switch. The design guideline and measurement result of each circuit are provided. Finally, WR-3 band heterodyne transmitter and receiver chips are introduced.

An overview of recent progress in terahertz monolithic integrated circuits (TMICs) is presented in this paper. Semiconductor technologies available for TMIC implementation are described, and recent results on amplifiers and signal sources operating at THz band are discussed. Finally, the current status of THz integrated transceiver system is reviewed.

Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining.>