Demo Data from EDBT 2026 / reviewers in the wild / expert
Zhaohao Zhang
dblp:271/2517
· DBLP profile ↗
2ranked-venue papers
1as first author
2since 2021 · last 2024
0000-0002-1583-9939ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 1 first-author · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 95% Memory systems · 5% |
Topics — the 6 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › multi-gate devices
FinFET |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design
low-power circuit design |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design › emerging device technologies
negative capacitance FET |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices
semiconductor device design |
0.8 | 1 | 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs · Sci. China Inf. Sci. 2024 |
Integrated circuit design › emerging device technologies
ferroelectric devices |
0.7 | 1 | 2023 | Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications · Sci. China Inf. Sci. 2023 |
Memory systems
non-volatile memory |
0.2 | 1 | 2023 | Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications · Sci. China Inf. Sci. 2023 |
Methods — techniques the papers use, named apart from their topics
TCAD simulation · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2024 | Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs
Zhaohao Zhang, Jiaxin Yao, Qingzhu Zhang, Gaobo Xu, Genquan Han, Huaxiang Yin |
Sci. China Inf. Sci. | 2 |
| 2023 | Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Zhaohao Zhang, Guoliang Tian, Jiali Huo, Qingzhu Zhang, Gaobo Xu, Huaxiang Yin |
Sci. China Inf. Sci. | 1 |