This article presents a novel readout circuit for the resistive tactile sensor array. Based on the 2-D scanning mechanism, a crosstalk suppression technique is proposed by combining the correlated double sampling (CDS) and zero potential method (ZPM). The output of the same sensor under different bias conditions is captured twice and amplified by a channel-parallel fully differential gain stage, performing analogous subtraction. To achieve nonuniformity compensation, the current injected into the readout channel is adjusted by the channel-parallel digital-to-analog converter (DAC). A successive approximation register (SAR) analog-to-digital converter (ADC) performs quantization, and the chip can be used as a serial peripheral interface (SPI) slave to update register values for gain configuration, power consumption control, and nonuniformity compensation. The 180-nm CMOS prototype chip occupies an area of$4.8~\text {mm}^{2}$and consumes$285~\mu $W. In order to validate the design, a tactile sensing system is built, using the readout circuit along with a$10\times 10$flexible sensor array. With the techniques proposed in this article, the readout error of the sensors in array is less than 0.3‰.

This article presents a low noise and wide linear dynamic 20-channel analog front-end (AFE) array for frequency-modulated continuous-wave (FMCW) light detection and ranging (LiDAR) system. Each channel of the AFE array mainly consists of a shunt feedback transimpedance amplifier (SF-TIA) with a dc cancellation loop (DCL), a post amplifier, and an output buffer. The DCL is proposed to eliminate the dc current, comprising the dc current sunk to ground (dc-STG) and the dc current sourced from power supply (dc-SFP). In addition, the post amplifier, cascaded with an operational transconductance amplifier (OTA) and an SF-TIA, is proposed to decouple the relationship between gain and output common voltage, achieving both large gain and large output swing. Furthermore, the equalization technique is adopted to expand the bandwidth of the AFE array. The AFE array was implemented and fabricated in a 0.18-$\mu \text{m}$CMOS technology. Measurement results show that the AFE array achieves the maximum transimpedance gain of 107 dB and eliminates the dc current between −150 and$250 ~\mu \text{A}$. With the maximum transimpedance gain, the measured bandwidth, the equivalent input-referred rms noise current, and the signal-to-crosstalk ratio (SCR) between adjacent channels are 165 MHz, 29.4 nArms, and −33.9 dB, respectively. The AFE array also achieves a linear dynamic range (DR) of 66 dB and the area of each channel is approximately equal to$0.16\times1.3$mm2.