We have successfully fabricated one of the earliest array-scale prototypes of a Memristive Cellular Nonlinear Network (M-CNN) with interconnected cells. In this live demonstration, we will showcase the operation of this 4x4 M-CNN array performing an edge detection task according to our previous work [1]. A user-defined input will be applied to the network, and the computing results will be visualized alongside the simulated operation of a standard CNN for comparison.

The field of neuromorphic computing is approaching an era of rapid adoption driven by the urgent need of a substitute for the von Neumann computing architecture. NEUROTEC I: “Neuro-inspired Artificial Intelligence Technologies for the Elec-tronics of the Future” project is an initiative sponsored by the German Federal Ministry of Education and Research (BMBF for its initials in German), that aims to effectively advance the foundations for the utilization and exploitation of neuromorphic computing. NEUROTEC I stands at its successful “final stage” driven by the collaboration from more than 8 institutes from the Jiilich Research Center and the RWTH Aachen University, as well as collaboration from several high-tech industry partners. The NEUROTEC I project considers the field interplay among materials, circuits, design and simulation tools. This paper provides an overview of the project's overall structure and discusses the scientific achievements of its individual activities.

Abstract Complementary Metal Oxide Semiconductor (CMOS) technology has been scaled down over the last forty years making possible the design of high-performance applications, following the predictions made by Gordon Moore and Robert H. Dennard in the 1970s. However, there is a growing concern that device scaling, while maintaining cost-effective production, will become infeasible below a certain feature size. In parallel, emerging applications including Internet-of-Things (IoT) and big data applications present high demands in terms of storage and computing capability, combined with challenging constraints in terms of size, power consumption and response latency. In this scenario, memristive devices have become promising candidates to complement the CMOS technology due to their CMOS manufacturing process compatibility, great scalability and high density, zero standby power consumption and their capacity to implement high density memories as well as new computing paradigms. Despite these advantages, memristive devices are also susceptible to manufacturing defects that may cause unique faulty behaviors that are not seen in CMOS, increasing significantly the complexity of test procedures. This paper provides a review about the manufacturing process of memristives devices, focusing on Valence Change Mechanism (VCM)-based memristive devices, and a comparative analysis of the CMOS and memristive device manufacturing processes. Moreover, this paper identifies possible manufacturing failure mechanisms that may affect these novel devices, completing the list of the already known mechanisms, and provides a discussion about possible faulty behaviors. Note that the identification of these mechanisms provides insights regarding the possible memristive devices’ defective behaviors, enabling to derive more accurate fault models and consequently, more suitable test procedures.