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Zongwen Li

dblp:283/2730 · DBLP profile ↗
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3ranked-venue papers
1as first author
2since 2021 · last 2025
0000-0002-8700-5685ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021Artificial intelligence and machine learning · 1 · 1 first-authorGraphics, computer vision, multimedia, augmented reality and games · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Storage systems · 62% Integrated circuit design · 38%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Storage systems
optical memory		 0.812024
Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory · Sci. China Inf. Sci. 2024
Integrated circuit design › semiconductor devices
charge-coupled devices		 0.212024
Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory · Sci. China Inf. Sci. 2024
Integrated circuit design
optoelectronic devices		 0.212024
Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory · Sci. China Inf. Sci. 2024

Methods — techniques the papers use, named apart from their topics

heterogeneous integration · 0.8
YearPublicationVenuePosition
2025 High quantum efficiency ultraviolet photodetector based on graphene and truncated silicon nanocones
Shaoxiong Wu, Xinyu Liu 0016, Baoshi Qiao, Dong Pu, Zongwen Li, Xiaoxue Cao, Srikrishna Chanakya Bodepudi, Muhammad Abid Anwar, Yuda Zhao, Tawfique Hasan, Yang Xu 0035
 Sci. China Inf. Sci.6
2024 Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory
Zheng Bian, Zongwen Li, Xiangwei Su, Jialei Miao, Yang Xu 0035, Yuda Zhao
 Sci. China Inf. Sci.3
2020 Switching Process Analysis and Drive Circuit Simulation of SiC MOSFET in Dynamic Wireless Charging for Electric Vehicles
abstract
In order to solve the problem of device impact and switching speed in dynamic wireless charging device for electric vehicles (EVs), first, a new SiC MOSFET model was established based on manufacturer's model and datasheet. Combined with this model, the hard-switching and soft-switching processes of SiC MOSFETs are compared and analyzed. Although soft-switching can solve the problems of changing switching speed and reducing device impact, it needs to modify the hardware circuit, which is not practical in the changeable environment of dynamic wireless charging of EV s. Based on this question, a new multi-grade voltage drive circuit is designed to meet the various requirements of the drive circuit in the wireless charging process of EVs. Finally, the drive circuit is simulated in Pspice, and its feasibility is explored according to its waveforms.
Zongwen Li, Rong Long, Liyan Zhang 0003, Qihong Chen
 ICARCV1