Transistor aging leads to the deterioration of analog circuit performance over time. The worst aging degradation is used to evaluate the circuit reliability. It is extremely expensive to obtain it since several circuit stimuli need to be simulated. The worst degradation collection cost reduction brings an inaccurate training dataset when a machine learning (ML) model is used to fast perform the estimation. Motivated by the fact that there are many similar subcircuits in large-scale analog circuits, in this article we propose Wages to train an ML model on an inaccurate dataset for the worst aging degradation estimation via a domain generalization technique. A sampling-based method on the feature space of the transistor and its neighborhood subcircuit is developed to replace inaccurate labels. A consistent estimation for the worst degradation is enforced to update model parameters. Label updating and model updating are performed alternately to train an ML model on the inaccurate dataset. Experimental results on the very advanced 5 nm technology node show that our Wages can significantly reduce the label collection cost with a negligible estimation error for the worst aging degradations compared to the traditional methods.

With continued scaling, the transistor aging induced by hot carrier injection (HCI) and bias temperature instability (BTI) causes an increasing failure of nanometer-scale integrated circuits (ICs). Compared to digital ICs, analog ICs are more susceptible to aging effects. The industrial large-scale analog ICs bring grand challenges in the efficiency of aging verification. In this article, we propose a heterogeneous graph convolutional network (H-GCN) to fast estimate aging-induced transistor degradation in analog ICs. To characterize the multityped devices and connection pins, a heterogeneous directed multigraph is adopted to efficiently represent the topology of analog ICs. A latent space mapping method is used to transform the feature vector of all typed devices into a unified latent space. We further extend the proposed H-GCN to be a deep version via initial residual connections and identity mappings. The extended deep H-GCN can extract information from multihop devices without an oversmoothing issue. A probability-based neighborhood sampling method on the bipartite graph is adopted to ease the model training on large-scale graphs and achieve good scalability. Experiments on very advanced 5-nm industrial benchmarks show that, compared to traditional graph learning methods and static aging reliability simulations by an industrial design-for-reliability (DFR) tool, the proposed deep H-GCN can achieve more accurate estimations of aging-induced transistor degradation. Compared to the dynamic and static aging reliability simulations, our extended deep H-GCN, on average, can achieve$241\times $and$39\times $speedup, respectively.

With continued scaling, transistor aging induced by Hot Carrier Injection and Bias Temperature Instability causes a gradual failure of nanometer-scale integrated circuits (ICs). In this paper, to characterize the multi-typed devices and connection ports, a heterogeneous directed multigraph is adopted to efficiently represent analog IC post-layout netlists. We investigate a heterogeneous graph convolutional network (H-GCN) to fast and accurately estimate aging-induced transistor degradation. In the proposed H-GCN, an embedding generation algorithm with a latent space mapping method is developed to aggregate information from the node itself and its multi-typed neighboring nodes through multi-typed edges. Since our proposed H-GCN is independent of dynamic stress conditions, it can replace static aging analysis. We conduct experiments on very advanced 5nm industrial designs. Compared to traditional machine learning and graph learning methods, our proposed H-GCN can achieve more accurate estimations of aging-induced transistor degradation. Compared to an industrial reliability tool, our proposed H-GCN can achieve 24.623x speedup on average.