Demo Data from EDBT 2026 / reviewers in the wild / expert
Gensong Li
dblp:288/2261
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2022
0000-0002-9475-8634ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Hardware reliability and fault tolerance · 92% Integrated circuit design · 8% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Hardware reliability and fault tolerance › soft errors
single event transient |
0.6 | 1 | 2022 | Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance
soft errors |
0.6 | 1 | 2022 | Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance › radiation effects
total ionizing dose effects |
0.5 | 1 | 2021 | Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET · Sci. China Inf. Sci. 2021 |
Integrated circuit design › semiconductor devices › field-effect transistor
MOSFET |
0.1 | 1 | 2021 | Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET · Sci. China Inf. Sci. 2021 |
Methods — techniques the papers use, named apart from their topics
pulse laser testing · 0.6
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2022 | Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence
Xia An, Gensong Li, Zhexuan Ren, Xing Zhang 0002, Ru Huang 0001 |
Sci. China Inf. Sci. | 3 |
| 2021 | Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET
Zhexuan Ren, Xia An, Gensong Li, Xing Zhang 0002, Ru Huang 0001 |
Sci. China Inf. Sci. | 3 |