This paper focuses on iso-on-chip-memory-capacity and iso-footprint Energy-Delay-Product (EDP) benefits of ultra-dense 3D, e.g., monolithic 3D (M3D), computing systems vs. corresponding 2D designs. Simply folding existing 2D designs into corresponding M3D physical designs yields limited EDP benefits$(\sim 1.4\times)$. New M3D architectural design points that exploit M3D physical design are crucial for large M3D EDP benefits. We perform comprehensive architectural exploration and detailed M3D physical design using foundry M3D process design kit and standard cell library for front-end-of-line (FEOL) Si CMOS logic, on-chip back-end-of-line (BEOL) memory, and a single layer of on-chip BEOL FETs. We find new M3D AI/ML accelerator architectural design points that have iso-footprint, iso-on-chip-memory-capacity EDP benefits ranging from$5.3\times$to$11.5\times$vs. corresponding 2D designs (containing only FEOL Si CMOS and on-chip BEOL memory). We also present an analytical framework to derive architectural insights into these benefits, showing that our principles extend to many architectural design points across various device technologies.

Carbon nanotube (CNT) field-effect transistors (CNFETs) promise to improve the energy efficiency of very-large-scale integrated (VLSI) systems. However, multiple challenges have prevented VLSI CNFET circuits from being realized, including inherent nano-scale material defects, robust processing for yielding complementary CNFETs (i.e., CNT CMOS: including both PMOS and NMOS CNFETs), and major CNT variations. Here, we summarize techniques that we have recently developed to overcome these outstanding challenges, enabling VLSI CNFET circuits to be experimentally realized today using standard VLSI processing and design flows. Leveraging these techniques, we demonstrate the most complex CNFET circuits and systems to-date, including a three-dimensional (3D) imaging system comprising CNFETs fabricated directly on top of a silicon imager, CNT CMOS analog and mixed-signal circuits, 1 kilobit CNFET static random-access memory (SRAM) memory arrays, and a 16-bit RISC-V microprocessor built entirely out of CNFETs.

Continuing a tradition at the IEEE VLSI Test Symposium this new topic session presents two interesting talks on new emerging computing and testing techniques. The first talk focuses on carbon nanotube electronics while the second talk discusses about wafer level testing under magnetic field.

The world's appetite for analyzing massive amounts of structured and unstructured data has grown dramatically. The computational demands of these abundant-data applications, such as deep learning, far exceed the capabilities of today's computing systems and are unlikely to be met with isolated improvements in transistor or memory technologies, or integrated circuit architectures alone. To achieve unprecedented functionality, speed, and energy efficiency, one must create transformative nanosystems whose architectures are based on the salient properties of the underlying nanotechnologies. Our Nano-Engineered Computing Systems Technology (N3XT) approach makes such nanosystems possible through new computing system architectures leveraging emerging device (logic and memory) nanotechnologies and their dense 3-D integration with fine-grained connectivity to immerse computing in memory and new logic devices (such as carbon nanotube field-effect transistors for implementing high-speed and low-energy logic circuits) as well as high-density nonvolatile memory (such as resistive memory), and amenable to ultradense (monolithic) 3-D integration of thin layers of logic and memory devices that are fabricated at low temperature. In addition, we explore the use of several device and integration technologies in the N3XT beyond the specific ones mentioned earlier that are also used in our main nanosystem prototypes. We also present an efficient resiliency technique to overcome endurance challenges in certain resistive memory technologies. N3XT hardware prototypes demonstrate the practicality of our architectures. We evaluate the benefits of the N3XT using a simulation framework calibrated using experimental measurements. System-level energy-delay product of common implementations of abundant-data workloads improves by three orders of magnitude in the N3XT compared with conventional architectures. These improvements impact a broad range of application workloads and architecture configurations, from embedded systems to the cloud.

The energy efficiency demands of future abundant-data applications, e.g., those which use inference-based techniques to classify large amounts of data, exceed the capabilities of digital systems today. Field-effect transistors (FETs) built using nanotechnologies, such as carbon nanotubes (CNTs), can improve energy efficiency significantly. However, carbon nanotube FETs (CNFETs) are subject to process variations inherent to CNTs: variations in CNT type (semiconductor or metallic), CNT density, or CNT diameter, to name a few. These CNT variations can degrade CNFET benefits at advanced technology nodes. One path to overcome CNT variations is to co-optimize CNT processing and CNFET circuit design; however, the required CNT process advancements have not been achieved experimentally. We present a new design approach (TRIG, Technique for Reducing errors using Iterative Gray code) to overcome process variations in hardware accelerators targeting inference-based applications that use serial matrix operations (serial: accumulated over at least 2 clock cycles). We demonstrate that TRIG can retain the major energy efficiency benefits (quantified using Energy Delay Product or EDP) of CNFETs despite CNT variations that exist in today's CNFET fabrication - without requiring further CNT processing improvements to overcome CNT variations. As a case study, we analyze the effectiveness of TRIG for a binary neural network hardware accelerator that classifies images. Despite CNT variations that exist today, TRIG can maintain 99% (90%) of projected EDP benefits of CNFET digital circuits for 90% (99%) image classification accuracy target. We also demonstrate experimentally fabricated CNFET circuits to compute scalar product (a common matrix operation, also called dot product), with and without TRIG: TRIG reduces the mean difference between the expected result (no errors) and the experimentally computed result by 30× in the presence of CNT variations, shown experimentally.

When we analyze the scaling factors of the recent technology nodes, we come to the conclusion that the geometrical scaling scenario has been replaced by the electrical scaling and hence the electrical characterization of these really challenging technologies becomes an absolute must. However, the extremely small process windows, and the 3-dimensional nature of the FinFET devices and the complicated interconnect schemes, make this characterization very difficult. Systematic failure modes and their dependence on the layout patterns are extremely complex and almost impossible to detect in-line. Moreover, soft failures become much more prevalent due to process marginalities and present not only yield but also reliability hazards. Hence, the new fault models must be created that take into account layout patterns and layout-process interactions to allow for more efficient testing and reliability risk screening. This talk will present novel approaches to electrical characterization of the dominant failure modes, its impact on the test generation and execution, and the need for tracking this information all the way from the front end process to the test and assembly stages of IC manufacturing.

Carbon nanotube technology is a promising technology to further reduce the energy consumption in electronics, as it is projected to achieve an order of magnitude improvement in energy-delay product compared to Silicon CMOS at highly-scaled technology nodes. In addition, CNTs are excellent candidates to be functionalized as sensors, and can potentially improve the energy efficiency of sensors and sensor interfaces for future autonomy-demanding applications. This paper presents an overview of time-based sensor interfaces implemented in a CNT technology. Time-based sensor interfaces yield highly-digital architectures, allowing for scalable and robust designs. All of the presented CNFET-based sensor interface circuits have been fabricated in a VLSI-compatible manner and have been validated through measurements.

Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and severely degrade their anticipated energy and speed benefits. Joint exploration and optimization of CNT processing options and CNFET circuit design are required to overcome this outstanding challenge. Unfortunately, existing approaches for such exploration and optimization are computationally expensive, and mostly rely on trial-and-error-based ad hoc techniques. In this paper, we present a framework that quickly evaluates the impact of CNT variations on circuit delay and noise margin, and systematically explores the large space of CNT processing options to derive optimized CNT processing and CNFET circuit design guidelines. We demonstrate that our framework: 1) runs over 100× faster than existing approaches and 2) accurately identifies the most important CNT processing parameters, together with CNFET circuit design parameters (e.g., for CNFET sizing and standard cell layouts), to minimize the impact of CNT variations on CNFET circuit speed with ≤5% energy cost, while simultaneously meeting circuit-level noise margin and yield constraints.

Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and severely degrade their anticipated energy and speed benefits. Joint exploration and optimization of CNT processing options and CNFET circuit design are required to overcome this outstanding challenge. Unfortunately, existing approaches for such exploration and optimization are computationally expensive, and mostly rely on trial-and-error-based ad-hoc techniques. In this paper, we present a systematic framework which quickly evaluates the impact of CNT variations on circuit delay and noise margin, and automatically explores the large space of CNT processing options to derive optimized CNT processing and CNFET circuit design guidelines. We demonstrate that: 1. Our new framework runs over 100X faster than existing approaches. 2. It accurately identifies the most important CNT processing parameters, together with CNFET circuit sizing, to minimize the impact of CNT variations while meeting circuit-level noise margin constraints.

Low-power applications, such as sensing, are becoming increasingly important and demanding in terms of minimizing energy consumption, driving the search for new and innovative interface architectures and technologies. Carbon Nanotube FETs (CNFETs) are excellent candidates for further energy reduction, as CNFET-based digital circuits are projected to potentially achieve an order of magnitude improvement in energy-delay product at highly scaled technology nodes. This paper presents an overview of the first demonstration of a complete sub-system, a sensor interface circuit, implemented entirely using CNFETs. The demonstrated sub-system is an all-digital capacitive sensor to digital converter. The CNFET sensor interface is demonstrated by using the CNFET circuitry to interface with a sensor used to control a handshaking robot.

Carbon Nanotube Field-Effect Transistors (CNFETs) are excellent candidates for building highly energy-efficient digital systems. However, imperfections inherent in carbon nanotubes (CNTs) pose significant hurdles to realizing practical CNFET circuits. In order to achieve CNFET VLSI systems in the presence of these inherent imperfections, careful orchestration of design and processing is required: from device processing and circuit integration, all the way to large-scale system design and optimization. In this paper, we summarize the key ideas that enabled the first experimental demonstration of CNFET arithmetic and storage elements. We also present an overview of a probabilistic framework to analyze the impact of various CNFET circuit design techniques and CNT processing options on system-level energy and delay metrics. We demonstrate how this framework can be used to improve the energy-delay-product (EDP) of CNFET-based digital systems.

Carbon Nanotube Field-Effect Transistors (CNFETs) are excellent candidates for designing highly energy-efficient future digital systems. However, carbon nanotubes (CNTs) are inherently highly subject to imperfections that pose major obstacles to robust CNFET digital VLSI. This paper summarizes commonly raised questions and concerns about CNFET technology through a series of frequently asked questions. The specific questions addressed in this paper are motivated by recent advances in the field since the publication of our earlier paper on frequently asked questions in the Proceedings of the 2009 Design Automation Conference.