This work presents an analytical approach for analyzing electromigration (EM) in modern technologies that use copper dual damascene (Cu DD) interconnects. In these technologies, due to design rule and methodology constraints, wires are typically laid out unidirectionally in each metal layer; since EM in Cu DD interconnects do not cross layer boundaries, the problem reduces to one of analyzing EM in multisegment interconnect lines. In contrast with traditional empirical methodologies, our approach is based on physics-based modeling, directly solving the differential equations that model EM-induced stress. This article places a focus on interconnect lines, for reasons described above, and introduces the new concept of boundary reflections of stress flux that ascribes a physical (wave-like) analogy to the transient stress behavior in a finite multisegment line. This framework is used to derive analytical expressions of transient EM stress for lines with any number of segments, which can also be tailored to include the appropriate number of terms for any desired level of accuracy. The approach is applied to both the nucleation phase and the postvoiding phase on large power grid benchmarks. These experiments demonstrate excellent accuracy as compared to accurate numerical solution, as well as linear complexity with the number of segments for evaluating stress at a specified point and time.

The analysis of transient stress buildup in on-chip interconnects due to electromigration (EM) requires the solution of partial differential equations (PDEs) with appropriate boundary conditions, but prior approaches have been computationally expensive. This paper uses a stress-electrical equivalence to map the solution of the system of PDEs for a general multisegment interconnect to an RC network. For tree structures, this system is solved in linear time in the frequency domain using model order reduction (MOR) techniques. We present two MOR approaches: one that is not guaranteed to provide a stable approximant due to the presence of the mass-conservation equation, but empirically does so for a large fraction of testcases; and another that is guaranteed-stable. To achieve a guaranteed-stable solution, the approach approximates the RC circuit in a Krylov space and captures the impact of mass conservation in the form of a mass conservation excitation. However, the latter is observed to be slightly less accurate than the first approach when it does provide a solution. The method demonstrates excellent accuracy against a commercial numerical solver, and is scalable, solving transient EM analysis problems on large power grid interconnect benchmarks.

Traditional approaches to analyzing electromigration (EM) in on-chip interconnects are largely driven by semi-empirical models. However, such methods are inexact for the typical multisegment lines that are found in modern integrated circuits. This paper overviews recent advances in analyzing EM in on-chip interconnect structures based on physics-based models that use partial differential equations, with appropriate boundary conditions, to capture the impact of electron-wind and back-stress forces within an interconnect, across multiple wire segments. Methods for both steady-state and transient analysis are presented, highlighting approaches that can solve these problems with a computation time that is linear in the number of wire segments in the interconnect.

Traditional methodologies for analyzing electromigration (EM) in VLSI circuits first filter immortal wires using Blech’s criterion, and then perform detailed EM analysis on the remaining wires. However, Blech’s criterion was designed for two-terminal wires and does not extend to general structures. This paper demonstrates a first-principles-based solution technique for determining the steady-state stress at all the nodes of a general interconnect structure, and develops an immortality test whose complexity is linear in the number of edges of an interconnect structure. The proposed model is applied to a variety of structures. The method is shown to match well with results from numerical solvers, to be scalable to large structures.

Traditional methods that test for electromigration (EM) failure in multisegment interconnects, over the lifespan of an IC, are based on the use of the Blech criterion, followed by Black's equation. Such methods analyze each segment independently, but are well known to be inaccurate due to stress buildup over multiple segments. This paper introduces the new concept of boundary reflections of stress flow that ascribes a physical (wave-like) interpretation to the transient stress behavior in a finite multisegment line. This can provide a framework for deriving analytical expressions of transient EM stress for lines with any number of segments, which can also be tailored to include the appropriate number of terms for any desired level of accuracy. The proposed method is shown to have excellent accuracy, through evaluations against the FEM solver COMSOL, as well as scalability, through its application on large power grid benchmarks.