International audience

International audience

The shift towards data-centric computing paradigms has given rise to new architectural approaches aimed at minimizing data movement and enhancing computational efficiency. In this context, In-Memory Computing (IMC) architectures have gained prominence for their ability to perform processing tasks within the memory array, reducing the recourse to data transfers. However, the susceptibility of these new paradigms to manufacturing defects poses a critical test challenge. This paper presents a novel March-like test algorithm for 8T SRAM-based IMC architectures, addressing the imperative need for comprehensive read port related defect coverage. The proposed algorithm achieves complete coverage of potential read port defects while maintaining the level of complexity equivalent to existing state-of-the-art test solutions.

The adoption of In-Memory Computing (IMC) architectures is one of the promising approaches to efficiently solve the Von Neumann bottleneck problem. In addition to arithmetic operations, IMC architectures aim at integrating additional logic operations directly in the memory array or/and at the periphery for saving time and power consumption. In this paper, a comprehensive model of a 128x128 bitcell array based on a 28nm FD-SOI process technology has been considered to analyze the behavior of IMC 8T SRAM bitcells in the presence of resistive-open defects injected in the read port. A hierarchical analysis including a detailed study of each defect was performed in order to determine their impact both in memory and computing modes, both locally on the defective bitcell and globally on the array. Experimental results show that the IMC mode offers the most effective detectability of resistive-open defects.