Zhenhua Ni

dblp:301/0071 · DBLP profile ↗
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7ranked-venue papers
0as first author
7since 2021 · last 2026
0000-0002-6316-2256ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 7 · 7 since 2021
YearPublicationVenuePosition
2026 Two-dimensional van der Waals high-speed photodetectors enhanced by surface and interface engineering
Yuanfang Yu, Senyao Tang, Fa Cao, Zhenhua Ni, Junpeng Lu
Sci. China Inf. Sci.6
2024 Two-dimensional materials for future information technology: status and prospects
abstract
Abstract Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.
Hao Qiu 0001, Zhihao Yu, Tiange Zhao, Mingsheng Xu, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Jingshu Guo, Pengwen Guo, Yue Hao 0001, Jingyi Hu, Weida Hu, Zehua Hu, Ali Imran 0004, Ziqiang Kong, Bilu Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Anlian Pan, Haowen Shu, Quanyang Tao, Ziao Tian, Haomin Wang 0005, Yeliang Wang, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Jeffrey Xu, Yang Xu 0035, Yuekun Yang, Jincheng Zhang 0001, Tao Zhang 0090, Xinbo Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou 0021, Shaohua Kevin Zhou, Deren Yang
Sci. China Inf. Sci.46
2024 Stable α-CsPbI3 with extremely red emission for expanding the color gamut
Weijie Zhao 0013, Changjiu Sun, Junli Wei, Mingjian Yuan, Zhenhua Ni, Junpeng Lu
Sci. China Inf. Sci.8
2023 Efficient charge transfer in WS2/WxMo1-xS2 heterostructure empowered by energy level hybridization
Xuhong An, Yehui Zhang, Yuanfang Yu, Yutian Yang, Xianghong Niu, Junpeng Lu, Jinlan Wang, Zhenhua Ni
Sci. China Inf. Sci.10
2023 Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity
Yueying Cui, Zhouyu Tong, Yuanfang Yu, Xiaodong Pi, Zhenhua Ni
Sci. China Inf. Sci.9
2021 Raman spectra evidence for the covalent-like quasi-bonding between exfoliated MoS2 and Au films
Junpeng Lv, Zhenhua Ni, Yeliang Wang, Xingjiang Zhou
Sci. China Inf. Sci.9
2021 Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector
Shaopeng Feng, Zhenliang Hu, Junpeng Lu, Zhenhua Ni
Sci. China Inf. Sci.7