EDBT 2026 Demo / reviewers in the wild / expert
Nellie Laleni
dblp:303/4720
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5ranked-venue papers
2as first author
5since 2021 · last 2026
0000-0002-2445-9989ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 5 · 2 first-author · 5 since 2021Software engineering, systems software and programming languages · 1 · 1 since 2021
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | ADC-Based Nonlinear Quantization for In-Memory Computing using FeFETsabstract479 Nellie Laleni, Thomas Kämpfe, Tae-Kwang Jang |
ISCAS | 1 |
| 2025 | Genetic Algorithm-Driven IMC Mapping for CNNs Using Mixed Quantization and MLC FeFETsabstractFerroelectric Field-Effect Transistors (FeFETs) are emerging as a highly promising non-volatile memory (NVM) technology for in-memory computing architectures, thanks to their low power consumption and non-volatility. These characteristics make FeFETs particularly well-suited for convolutional neural networks (CNNs), especially in power-constrained environments where minimizing the memory footprint is critical for improving both area efficiency and energy consumption. Two effective strategies for reducing memory requirements are quantization and the use of multi-level cell (MLC) configurations in NVMs. This work proposes a solution that combines mixed quantization schemes with FeFET-based MLC and single-level cell (SLC) configurations to balance memory usage and accuracy. Given the large hyperparameter space introduced by these combinations, we employ a genetic algorithm to efficiently explore and identify Pareto-optimal solutions, allowing flexible adaptation to various application-specific requirements. Our approach achieves significant improvements in both memory efficiency and performance, reducing memory usage by 50% while sacrificing only 3% accuracy compared to the 8-bit ResNet baseline. After a single epoch of retraining, the accuracy matches the baseline while fully retaining the memory savings. Additionally, when compared to the 4-bit baseline, a 46% memory reduction is achieved with virtually no loss in accuracy. Alptekin Vardar, Franz Müller 0001, Gonzalo Cuñarro, Nellie Laleni, Nandakishor Yadav, Thomas Kämpfe |
DATE | 4 |
| 2025 | Ferroelectric Compute-in-Memory Framework for Solving Pure and Mixed Strategy Nash EquilibriumabstractNash equilibrium (NE) is a key concept in game theory, but verifying its existence is NP-complete. Recent advancements proposed quantum NE solvers that identify pure strategy NE solutions (binary solutions) by integrating slack terms into the objective function, known as slack-quadratic unconstrained binary optimization (S-QUBO). However, S-QUBO alters the objective function and can lead to incorrect solutions. Additionally, current solvers only find a limited number of pure strategy NE solutions and cannot address mixed strategy NE (decimal solutions), leaving many solutions unexplored. In this work, we propose C-Nash, a novel ferroelectric compute-in-memory (CiM) framework capable of efficiently addressing both pure and mixed strategy NE solutions. C-Nash consists of 1) a transformation method that transforms quadratic optimization into a MAX-QUBO form without incorporating additional slack variables, thus avoiding objective function changes; 2) A ferroelectric FET (FeFET) based CiM bi-crossbar structure and winner-takes-all (WTA) tree for accelerating the MAX-QUBO form in a single iteration; 3) An efficient operation flow including a rank-based QUBO reformulation algorithm that simplifies the QUBO matrices to reduce hardware overhead, and a two-phase based simulated annealing (SA) logic for finding NE solutions; 4) A FeFET-based crossbar macro for experimental demonstration. Experimental results show that C-Nash increases the success rate for identifying NE solutions by 68.6% while saving$3\times $in chip size. Furthermore, C-Nash can find all pure and mixed NE solutions, unlike D-Wave based quantum approaches which only find some pure strategy NE solutions. Additionally, C-Nash significantly reduces the time-to-solution by up to$157.9\times $/$79.0\times $compared to D-Wave 2000 Q6 and D-Wave Advantage 4.1, respectively. Yu Qian 0002, Ding Huang, Alptekin Vardar, Nellie Laleni, Kai Ni 0004, Thomas Kämpfe, Cheng Zhuo, Xunzhao Yin |
IEEE Trans. Circuits Syst. I Regul. Pap. | 4 |
| 2024 | Single Slope ADC with Reset Counting for FeFET-based In-Memory ComputingabstractThis paper presents the design of a 4-bit Single Slope (SS) ADC adopting reset counting method for current mode in-memory computing (IMC) acceleration in 28nm SLPe technology. Two types of comparators are combined for enhanced power efficiency and lower kickback noise, achieving 50.2 fJ/conv Walden FoM at a reduced area footprint of 101.6 µm2. Finally, the SS-ADC is integrated with a 1FeFET1R macro to compute multiply-accumulate (MAC) operations for convolutional or fully connected layers in neural networks. Furthermore, the SS-ADC offers the possibility for higher resolution and the integration of analog non-linear activation function, reducing the digital overhead in neural network accelerators. Nellie Laleni, Sahana Padma, Thomas Kämpfe, Tae-Kwang Jang |
ISCAS | 1 |
| 2022 | FELIX: A Ferroelectric FET Based Low Power Mixed-Signal In-Memory Architecture for DNN AccelerationabstractToday, a large number of applications depend on deep neural networks (DNN) to process data and perform complicated tasks at restricted power and latency specifications. Therefore, processing-in-memory (PIM) platforms are actively explored as a promising approach to improve the throughput and the energy efficiency of DNN computing systems. Several PIM architectures adopt resistive non-volatile memories as their main unit to build crossbar-based accelerators for DNN inference. However, these structures suffer from several drawbacks such as reliability, low accuracy, large ADCs/DACs power consumption and area, high write energy, and so on. In this article, we present a new mixed-signal in-memory architecture based on the bit-decomposition of the multiply and accumulate (MAC) operations. Our in-memory inference architecture uses a single FeFET as a non-volatile memory cell. Compared to the prior work, this system architecture provides a high level of parallelism while using only 3-bit ADCs. Also, it eliminates the need for any DAC. In addition, we provide flexibility and a very high utilization efficiency even for varying tasks and loads. Simulations demonstrate that we outperform state-of-the-art efficiencies with 36.5 TOPS/W and can pack 2.05 TOPS with 8-bit activation and 4-bit weight precision in an area of 4.9 mm 2 using 22 nm FDSOI technology. Employing binary operation, we obtain 1169 TOPS/W and over 261 TOPS/W/mm 2 on system level. Taha Soliman, Nellie Laleni, Tobias Kirchner, Franz Müller 0001, Thomas Kämpfe, Andre Guntoro, Norbert Wehn |
ACM Trans. Embed. Comput. Syst. | 2 |