Hyungrock Oh

dblp:309/4006 · also Oh Hyung Rock · DBLP profile ↗
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4ranked-venue papers
0as first author
3since 2021 · last 2025
—ORCID · unresolved

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 4 · 3 since 2021Software engineering, systems software and programming languages · 1
YearPublicationVenuePosition
2025 Framework for Augmenting Main Memory with CXL-connected Emerging Memory Alternatives
abstract
The rapid evolution of memory technologies and the advent of Compute Express Link (CXL) have opened up new possibilities for scaling main memory by enabling hybrid memory systems with pooled and shared content. System-level evaluation of new memory systems during the early development stage is important for the enablement and further integration of new memory and interconnect technologies. However, existing solutions do not offer a framework neither for emerging memory protocols nor for novel memory technologies. This paper introduces CXL-HMEM to evaluate emerging CXL-based hybrid main memory architectures by applying the System Technology Co-Optimization (STCO) technique. The framework provides flexible performance metrics, workload simulation, and memory traffic analysis to assess system performance under various hybrid memory configurations, including DRAM and tiered memory hierarchies. Key features include support for memory technologies such as IGZO-based DRAM (IGZO) and FeRAM, workload scalability, and an integrated model of the CXL behavior. CXL-HMEM shows that emerging memories can improve system bandwidth and energy consumption by 7%, while having potential to further mitigate particular bottlenecks. CXL-based hybrid main memory can speed up the memory access time by >2× compared to conventional approaches of main memory extension.
Khakim Akhunov, Dwaipayan Biswas, Emil Karimov, Arvind Sharma, Hyungrock Oh, Maarten Rosmeulen, Julien Ryckaert, James Myers
ISCAS5
2025 3D IGZO Charge-Coupled Memory DTCO & STCO Analysis for Compute-near-Memory Applications
abstract
The demand for high-capacity and energy-efficient memory solutions has surged in the era of data-centric computing, particularly for Artificial Intelligence (AI) and Machine Learning (ML) workloads. This paper introduces a novel memory architecture leveraging Charge-Coupled Device (CCD) technology, engineered in a sequential-access block memory configuration, to enhance Compute-near-Memory (CnM) systems. We propose an optimized 3D IGZO CCD block memory as an on-chip weight buffer for high-capacity CnM systems. Our approach achieves 2.95−131.26× improvement in area efficiency and 1.32−4.33× improvement in energy efficiency compared to SRAM solutions.
Khakim Akhunov, Hyungrock Oh, Fernando García-Redondo, Yukai Chen, Arvind Sharma, Jiacong Sun, Sahan Gamage, Maarten Rosmeulen, Swaraj Bandhu Mahato, Rishabh Kishore, Subhali Subhechha, Jaydeep P. Kulkarni, Marian Verhelst, Dwaipayan Biswas, Marie Garcia Bardon, Wim Dehaene, Julien Ryckaert
ISCAS3
2023 Exploring Pareto-Optimal Hybrid Main Memory Configurations Using Different Emerging Memories
abstract
Main memory system design and corresponding technology requirements have become increasingly challenging for data-dominated high-performance applications. To address the leakage and scalability issues of the conventional DRAM-based memory, new memory technologies with ultra-low leakage and potential for high scalability have been explored extensively over the last decade. However, none of them are mature enough to serve as a drop-in replacement for DRAM. In this paper, we propose a hybrid main memory system solution for utilizing new memory technologies with specific features, based on the target application characteristics and system configurations. To this end, we examine two new memories, 1S-1VCMA and IGZO-based DRAM, along with conventional DRAM in the context of hybrid main memory solutions for high-capacity and low-power Pareto-optimizations, respectively. To better evaluate the power and performance, we consider the page-fault modeling in our evaluations. The results of the simulation show that different combinations of memory technologies in the hybrid memory system, different memory capacities, and different storage systems could provide a promising solution in the system regarding the characteristics of running applications and the requirements of the system.
Saeideh Alinezhad Chamazcoti, Mohit Gupta 0004, Hyungrock Oh, Timon Evenblij, Francky Catthoor, Manu Perumkunnil Komalan, Gouri Sankar Kar, Arnaud Furnémont
IEEE Trans. Circuits Syst. I Regul. Pap.3
2018 Main memory organization trade-offs with DRAM and STT-MRAM options based on gem5-NVMain simulation frameworks
abstract
Current main memory organizations in embedded and mobile application systems are DRAM dominated. The ever-increasing gap between today's processor and memory speeds makes the DRAM subsystem design a major aspect of computer system design. However, the limitations to DRAM scaling and other challenges like refresh provide undesired trade-offs between performance, energy and area to be made by architecture designers. Several emerging NVM options are being explored to at least partly remedy this but today it is very hard to assess the viability of these proposals because the simulations are not fully based on realistic assumptions on the NVM memory technologies and on the system architecture level. In this paper, we propose to use realistic, calibrated STT-MRAM models and a well calibrated cross-layer simulation and exploration framework, named SEAT, to better consider technologies aspects and architecture constraints. We will focus on general purpose/mobile SoC multi-core architectures. We will highlight results for a number of relevant benchmarks, representatives of numerous applications based on actual system architecture. The most energy efficient STT-MRAM based main memory proposal provides an average energy consumption reduction of 27% at the cost of 2x the area and the least energy efficient STT-MRAM based main memory proposal provides an average energy consumption reduction of 8% at the around the same area or lesser when compared to DRAM.
Manu Perumkunnil Komalan, Hyungrock Oh, Matthias Hartmann, Sushil Sakhare, Christian Tenllado, José Ignacio Gómez, Gouri Sankar Kar, Arnaud Furnémont, Francky Catthoor, Sophiane Senni, David Novo, Abdoulaye Gamatié, Lionel Torres
DATE2