Demo Data from EDBT 2026 / reviewers in the wild / expert
Shijian Ge
dblp:309/4252
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2022
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Hardware reliability and fault tolerance · 87% Cloud and datacenter computing · 13% |
Topics — the 1 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Hardware reliability and fault tolerance › memory reliability
DRAM error characterization |
0.6 | 1 | 2022 | From Correctable Memory Errors to Uncorrectable Memory Errors: What Error Bits Tell · SC 2022 |
Methods — techniques the papers use, named apart from their topics
predictive modeling · 0.6error-bit analysis · 0.6empirical field data analysis · 0.6
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2022 | From Correctable Memory Errors to Uncorrectable Memory Errors: What Error Bits TellabstractUncorrectable memory errors are one of the major failure causes in datacenters. In this paper, we present an empirical study correlating correctable errors (CEs) and uncorrectable errors (UEs) using the large-scale field data across 3 major dual in-line memory module (DIMM) manufacturers from a contemporary server farm of ByteDance. Different from the previous studies, our study is the first to comprehend the error-bit information of CEs and the DIMM part numbers. Unlike the traditional chipkill error correction code (ECC), in contemporary Intel server platforms the ECC gets weakened, not able to tolerate some error-bit patterns from a single chip. Using obtainable coarse-grained ECC knowledge, we derive a new indicator from the error-bit information: risky CE occurrence in terms of ECC guaranteed coverage. From the data, we show that the new indicator has a consistently high sensitivity and specificity in the test of future UE occurrences across DIMMs from different manufacturers. This leads us to conjecture that the weakened ECC substantially contributes to many UEs today. The new risky CE indicator is then applied in predicting the future UE occurrence based on the CE history. We empirically demonstrate how practically useful predictors are constructed in conjunction with other useful attributes such as certain micro-level fault indicators and DIMM part numbers, achieving the state-of-the-art performance. Cong Li 0010, Yu Zhang 0209, Tai Huang, Shen Zhou 0002, Shijian Ge |
SC | 10 |
| 2021 | Fault-Aware Prediction-Guided Page Offlining for Uncorrectable Memory Error PreventionabstractUncorrectable memory errors are the major causes of hardware failures in datacenters leading to server crashes. Page offlining is an error-prevention mechanism implemented in modern operating systems. Traditional offlining policies are based on correctable error (CE) rate of a page in a past period. However, CEs are just the observations while the underlying causes are memory circuit faults. A certain fault such as a row fault can impact quite a few pages. Meanwhile, not all faults are equally prone to uncorrectable errors (UEs). In this paper, we propose a fault-aware prediction-guide policy for page offlining. In the proposed policy, we first identify row faults based on CE observations as the preliminary candidates for offlining. Leveraging the knowledge of the error correction code, we design a predictor based on error-bit patterns to predict whether a row fault is prone to UEs or not. Pages impacted by the UE-prone rows are then offlined. Empirical evaluation using the error log from a modern large-scale cluster in ByteDance demonstrates that the proposed policy avoids several times more UEs than the traditional policy does at a comparable cost of memory capacity loss due to page offlining. Cong Li 0010, Shen Zhou 0002, Shijian Ge |
ICCD | 7 |