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Choong-Ki Kim

dblp:31/1423 · DBLP profile ↗
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2ranked-venue papers
0as first author
1since 2021 · last 2023
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Artificial intelligence and machine learning · 1 · 1 since 2021Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
analog and mixed-signal circuits		 0.011985
An Empirical Model for the Threshold Voltage of Enhancement NMOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET modeling		 0.011985
An Empirical Model for the Threshold Voltage of Enhancement NMOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Integrated circuit design › semiconductor device modeling
threshold voltage modeling		 0.011985
An Empirical Model for the Threshold Voltage of Enhancement NMOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Integrated circuit design › semiconductor devices
short-channel effects		 0.011985
An Empirical Model for the Threshold Voltage of Enhancement NMOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985

Methods — techniques the papers use, named apart from their topics

parameter extraction · 0.0empirical modeling · 0.0
YearPublicationVenuePosition
2023 A Genetic Algorithm for Marine Spatial Planning with Minimized Conflict Between Planned Regions
Seo-Ah Yu, Choong-Ki Kim, Yong-Hyuk Kim
 IJCCI2
1985 An Empirical Model for the Threshold Voltage of Enhancement NMOSFET's
abstract
A new empirical model for the threshold voltage of enhancement NMOSFET is proposed based on experimental observations. This model covers both short and narrow channel effects. The model equation is formulated by the superposition of these two effects, and extraction of model parameters is presented. Comparison of the model with experimentally measured values shows good agreement for transistors with effective channel length down to 1.8 μm and effective channel width down to 1.0 μm.
Hong-June Park, Choong-Ki Kim
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.2