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K.-Y. Cheng

dblp:317/5014 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 1997
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor device fabrication
semiconductor growth		 0.011997
Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications · Proc. IEEE 1997
Integrated circuit design › semiconductor devices
III-V compound semiconductors		 0.011997
Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications · Proc. IEEE 1997
Integrated circuit design
optoelectronic devices		 0.011997
Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications · Proc. IEEE 1997

Methods — techniques the papers use, named apart from their topics

real-time feedback growth control · 0.0
YearPublicationVenuePosition
1997 Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications
abstract
Molecular beam epitaxy (MBE) is a highly precise and versatile crystal growth technique. Since the first demonstration of quantum-well and superlattice structures in the early 1970's, MBE has continuously played a pivotal role in the development of innovative key optoelectronic devices. The advances in real-time feedback growth control make the MBE technique suitable for the demanding manufacturing environment. This paper reviews the principle and status of MBE technology with emphasis on III-V compound semiconductors for optoelectronic applications.
K.-Y. Cheng
 Proc. IEEE1