Kui Wen

dblp:317/7922 · DBLP profile ↗
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4ranked-venue papers
1as first author
4since 2021 · last 2025
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Systems, architecture and hardware · 4 · 1 first-author · 4 since 2021
YearPublicationVenuePosition
2025 A 36.8-μW 66 nV/√Hz 85.7 dB-System-SNDR Reconfigurable Single-Channel ExG Acquisition System for Bio-Sensor Modules
abstract
This paper presents a fully integrated reconfigurable single-channel IC with high energy efficiency for bio-signal acquisition in Internet-of-Medical Things (IoMT) systems. The overall signal chain consists of a capacitively-coupled instrumentation amplifier (CCIA) and a 16-bit delta-sigma ($\Delta$$\Sigma$) ADC. The ADC is directly driven by the CCIA without a traditional driver stage. The folded path of the first stage in CCIA is sliced for reconfigurable noise levels. In addition, a single-stage floating inverter amplifier (FIA) assisted by the correlated-level-shifting (CLS) technique is employed in the switched-capacitor (SC)$\Delta$$\Sigma$modulator for fully dynamic operation with sufficient DC gain. Fabricated in 180-nm CMOS, the CCIA achieves an input-referred noise level ranging from 35.8 to 67 nV/$\surd$Hz with a best noise-efficiency factor (NEF) of 5.54. It corresponds to an integrated noise ranging from 0.63 to 1.16$\mu$$\text{V}_\text{rms}$(0.5-100 Hz) and 1.93 to 3.51$\mu$$\text{V}_\text{rms}$(0.1-3 kHz), respectively. The ADC achieves a peak SNDR of 92.6 dB for a 2.3-$\text{V}_\text{pp}$differential input and can support 16$\times$power/BW reconfigurability with ENOB$>$15 bit. The complete system occupies an active area of 0.56 mm$^{2}$and achieves 85.7-dB system SNDR over a 500 Hz BW with an OSR of 128. It consumes 36.8$\mu$W from a 1.8-V supply, corresponding to an SNDR-based Schreier FoM of 157 dB. Biological measurement is demonstrated successfully, and the results verify that the proposed IC is applicable to high-quality ExG signal acquisition.
Yuke Shen, Kui Wen, Yanbo Zhang 0002, Yi Shen 0007, Shubin Liu 0001, Zhangming Zhu
IEEE Trans. Circuits Syst. I Regul. Pap.3
2024 A 182.9-dB FoM 108.2-dB SFDR Power/Bandwidth Configurable Fully Dynamic Switched-Capacitor Zoom ADC With Interstage Leakage Shaping
abstract
This article presents a fully dynamic switched-capacitor zoom ADC with 1st-order interstage leakage shaping (ILS). Noise shaping capability is integrated into the coarse stage by a low-cost error-feedback (EF) path, effectively mitigating quantization noise leakage in the traditional zoom architecture due to the non-unity STF. In addition, a swing-enhanced floating inverter amplifier (FIA) architecture is proposed for improved linearity as well as fully dynamic operations. The prototype ADC is fabricated in a 65-nm CMOS process and occupies an active area of 0.22 mm2. With a 1.2-V supply, it achieves 98.1-dB peak SNDR over a 20-kHz bandwidth with 142.8$\mu $W power consumption, resulting in a DR-based Schreier FoM of 182.9 dB and an SNDR-based FoM of 179.5 dB, respectively. According to the measurement results, 8$\times $power/BW configurability can be achieved by the zoom ADC while maintaining SNDR above 98 dB.
Yuke Shen, Shubin Liu 0001, Kui Wen, Yanbo Zhang 0002, Yi Shen 0007, Ruixue Ding, Zhangming Zhu
IEEE Trans. Circuits Syst. I Regul. Pap.3
2024 A -64.3 dB THD, 26 nV/√ Hz Bio-Potential Readout Analog-Front-End Amplifier With a Gm-C Integrator-Implanted DC Servo Loop, and a Bulk-Driven Ripple Reduction Loop
abstract
This paper presents a$G_{m}$-C integrator-implanted DC servo loop (GMCI2-DSL) and a bulk-driven ripple reduction loop (BD-RRL) for bio-potential readout analog-front-end (AFE) amplifier. The proposed bio-potential readout AFE amplifier employs the GMCI2-DSL and BD-RRL to achieve low noise and significant total harmonic distortion (THD) with small ripple amplitude. A prototype has been taped out using a 0.18-$\mu \text{m}$standard CMOS technology, and the core circuit occupies 880$\mu \text{m}\,\,\times $630$\mu \text{m}$. The mid-band gain is about 40 dB with a 1.3-V supply voltage, and the chip’s quiescent power is 10.8$\mu \text{W}$. The measured results show that the input-referred noise density is 26 nV/$\surd $Hz, and the input-referred integrated noise in the range from 0.5 Hz to 500 Hz is 0.93$\mu V_{rms}$. The measured THD of a 5-$\text{m}V_{pp}$input sinusoidal signal at 5.1 Hz is −64.3 dB without any input offset. The amplitude of residue ripple is achieved as 197.8$\mu \text{V}$around chopping frequency ($f_{ch}$) by ripple suppression. High-fidelity and real-time electrocardiogram (ECG) signals are acquired.
Kui Wen, Shubin Liu 0001, Longjie Zhong, Yuke Shen, Zhangming Zhu
IEEE Trans. Circuits Syst. I Regul. Pap.1
2023 Component Fault Diagnosability of Hierarchical Cubic Networks
abstract
The fault diagnosability of a network indicates the self-diagnosis ability of the network, thus it is an important measure of robustness of the network. As a neoteric feature for measuring fault diagnosability, the r -component diagnosability ct r (G) of a network G imposes the restriction that the number of components is at least r in the remaining network of G by deleting faulty set X , which enhances the diagnosability of G . In this article, we establish the r -component diagnosability for n -dimensional hierarchical cubic network HCN n , and we show that, under both PMC model and MM* model, the r -component diagnosability of HCN n is rn -½( r -1) r +1 for n ≥ 2 and 1≤ r≤ n-1 . Moreover, we introduce the concepts of 0-PMC subgraph and 0-MM* subgraph of HCN n . Then, we make use of 0-PMC subgraph and 0-MM* subgraph of HCN n to design two algorithms under PMC model and MM* model, respectively, which are practical and efficient for component fault diagnosis of HCN n . Besides, we compare the r -component diagnosability of HCN n with the extra conditional diagnosability, diagnosability, good-neighbor diagnosability, pessimistic diagnosability, and conditional diagnosability, and we verify that the r -component diagnosability of HCN n is higher than the other types of diagnosability.
Yanze Huang, Kui Wen, Limei Lin, Li Xu 0002, Sun-Yuan Hsieh
ACM Trans. Design Autom. Electr. Syst.2