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Mingxuan Bu

dblp:332/3394 · DBLP profile ↗
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2ranked-venue papers
2as first author
2since 2021 · last 2025
0000-0001-7929-4870ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 2 · 2 first-author · 2 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Emerging computing paradigms · 77% Integrated circuit design · 23%

Topics — the 2 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Emerging computing paradigms
neuromorphic computing
0.912025
High-temperature optoelectronic synaptic devices based on 4H-SiC · Sci. China Inf. Sci. 2025
Integrated circuit design
optoelectronic devices
0.312025
High-temperature optoelectronic synaptic devices based on 4H-SiC · Sci. China Inf. Sci. 2025

Methods — techniques the papers use, named apart from their topics

optoelectronic synapses · 0.9
YearPublicationVenuePosition
2025 High-temperature optoelectronic synaptic devices based on 4H-SiC
Mingxuan Bu, Zhenyi Ni, Dongke Li, Deren Yang, Xiaodong Pi
Sci. China Inf. Sci.1
2022 Synaptic devices based on semiconductor nanocrystals
abstract
To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.
Mingxuan Bu, Yue Wang 0061, Zhouyu Tong, Yiqiang Zhang, Deren Yang, Xiaodong Pi
Frontiers Inf. Technol. Electron. Eng.1