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EDBT 2026 Demo / reviewers in the wild / expert

Yanqing Zhang 0012

dblp:342/9534-12 · DBLP profile ↗
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2ranked-venue papers
0as first author
1since 2021 · last 2021
0000-0002-7074-7957ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 2 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Integrated circuit design · 49% Hardware reliability and fault tolerance · 46% Memory systems · 5%

Topics — the 7 heaviest of 7, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Hardware reliability and fault tolerance
soft errors		 0.522021
Single-event upset prediction in static random access memory cell account for parameter variations · Sci. China Inf. Sci. 2019
Design of a high-performance 12T SRAM cell for single event upset tolerance · Sci. China Inf. Sci. 2021
Integrated circuit design
digital circuit design		 0.512021
Design of a high-performance 12T SRAM cell for single event upset tolerance · Sci. China Inf. Sci. 2021
Integrated circuit design › memory circuit design
SRAM cell design		 0.512021
Design of a high-performance 12T SRAM cell for single event upset tolerance · Sci. China Inf. Sci. 2021
Hardware reliability and fault tolerance › soft errors
single-event upset		 0.412019
Single-event upset prediction in static random access memory cell account for parameter variations · Sci. China Inf. Sci. 2019
Hardware reliability and fault tolerance › soft errors
single-event upset mitigation		 0.112021
Design of a high-performance 12T SRAM cell for single event upset tolerance · Sci. China Inf. Sci. 2021
Memory systems › random-access memory
SRAM		 0.112019
Single-event upset prediction in static random access memory cell account for parameter variations · Sci. China Inf. Sci. 2019
Integrated circuit design › memory circuit design
SRAM cell		 0.112019
Single-event upset prediction in static random access memory cell account for parameter variations · Sci. China Inf. Sci. 2019

Methods — techniques the papers use, named apart from their topics

12T SRAM topology · 0.5parameter variation modeling · 0.4
YearPublicationVenuePosition
2021 Design of a high-performance 12T SRAM cell for single event upset tolerance
Chunhua Qi, Yanqing Zhang 0012, Chaoming Liu, Liyi Xiao, Mingxue Huo, Guofu Zhai
 Sci. China Inf. Sci.2
2019 Single-event upset prediction in static random access memory cell account for parameter variations
Mingxue Huo, Liyi Xiao, Chunhua Qi, Yanqing Zhang 0012, Jianning Ma, Yinghun Piao
 Sci. China Inf. Sci.6