EDBT 2026 Demo / reviewers in the wild / expert
Steve Shao-Shiun Chung
dblp:346/8264
· DBLP profile ↗
1ranked-venue papers
1as first author
0since 2021 · last 1989
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
0.0 | 1 | 1989 | A charge-based capacitance model of short-channel MOSFETs · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1989 |
Integrated circuit design › analog and mixed-signal circuits
device modeling |
0.0 | 1 | 1989 | A charge-based capacitance model of short-channel MOSFETs · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1989 |
Integrated circuit design
digital circuit design |
0.0 | 1 | 1989 | A charge-based capacitance model of short-channel MOSFETs · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1989 |
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOS capacitance model |
0.0 | 1 | 1989 | A charge-based capacitance model of short-channel MOSFETs · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1989 |
Methods — techniques the papers use, named apart from their topics
device simulation · 0.0charge-sharing scheme · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1989 | A charge-based capacitance model of short-channel MOSFETsabstractA quasi-static two-dimensional intrinsic capacitance model for short-channel MOSFETs is discussed. It is derived based in a physically based charge-sharing scheme and implemented using a quasi-static solution of a MOS device simulator. Two-dimensional field-induced mobility degradation, velocity saturation, and short-channel effects are included in the model. The charge conservation rule holds, and channel charge partitioning is properly treated. The simulation results clearly show the importance of two-dimensional field-induced effects to short-channel MOS devices. Comparison of the simulated results with experimentally measured data shows that the model is far more reliable than the analytical one. The method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analog MOS integrated circuits.> Steve Shao-Shiun Chung |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. | 1 |