EDBT 2026 Demo / reviewers in the wild / expert
Wenwu Xiao
dblp:347/8700
· DBLP profile ↗
3ranked-venue papers
1as first author
3since 2021 · last 2025
0000-0003-0387-7206ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3 · 1 first-author · 3 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
3 papers |
Integrated circuit design · 65% Emerging computing paradigms · 24% Memory systems · 11% |
Topics — the 5 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
memory circuit design |
1.5 | 2 | 2025 | Physics based circuit compatible model for hybrid antiferroelectric random access memory · Sci. China Inf. Sci. 2025 Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory · Sci. China Inf. Sci. 2023 |
Integrated circuit design › emerging device technologies
ferroelectric field-effect transistor |
0.7 | 1 | 2023 | Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor · Sci. China Inf. Sci. 2023 |
Memory systems › on-chip memory
embedded memory |
0.2 | 1 | 2023 | Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory · Sci. China Inf. Sci. 2023 |
Memory systems
non-volatile memory |
0.2 | 1 | 2023 | Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory · Sci. China Inf. Sci. 2023 |
Integrated circuit design › semiconductor devices
semiconductor device physics |
0.2 | 1 | 2023 | Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor · Sci. China Inf. Sci. 2023 |
Methods — techniques the papers use, named apart from their topics
physics-based modeling · 0.9hafnium zirconium oxide ferroelectric · 0.7
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | Physics based circuit compatible model for hybrid antiferroelectric random access memory
Qiuxia Wu, Wenwu Xiao, Wenxuan Ma 0008, Chunfu Zhang, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |
| 2023 | Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor
Fenning Liu, Wenwu Xiao, Genquan Han |
Sci. China Inf. Sci. | 3 |
| 2023 | Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory
Wenwu Xiao, Huifu Duan, Fujun Bai, Qiwei Ren, Genquan Han |
Sci. China Inf. Sci. | 1 |